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Multi-trench region for accumulation of photo-generated charge in a CMOS imager

  • US 6,767,759 B2
  • Filed: 01/25/2002
  • Issued: 07/27/2004
  • Est. Priority Date: 08/28/2000
  • Status: Expired due to Term
First Claim
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1. A method of forming a photosensor, comprising the steps of:

  • providing a semiconductor substrate having a doped layer of a first conductivity type;

    forming a plurality of trenches in said doped layer to define a photosensitive area, each of said plurality of trenches having a plurality of sidewalls and a bottom;

    doping the sidewalls and bottom of each of said plurality of trenches to form a doped region of a second conductivity type; and

    forming an insulating layer on the sides and bottom of each of said plurality of trenches over said doped region.

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