Method of N2O growth of an oxide layer on a silicon carbide layer
First Claim
1. A method of fabricating a silicon carbide structure, comprising:
- oxidizing a layer of silicon carbide in an environment comprising N2O using a predetermined temperature profile which includes an oxidation temperature of at least about 1200°
C.; and
wherein the step of oxidizing a layer of silicon carbide in an environment comprising N2O, further comprises oxidizing the layer of silicon carbide utilizing a flow rate profile of N2O which includes a flow rate which provides an initial residence time of the N2O of at least about 11 seconds.
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Abstract
Methods for fabricating a layer of oxide on a silicon carbide layer are provided by forming the oxide layer on the silicon carbide layer by oxidizing the silicon carbide layer in an N2O environment. A predetermined temperature profile and/or a predetermined flow rate profile of N2O are provided during the oxidation. The predetermined temperature profile and/or predetermined flow rate profile may be constant or variable and may include ramps to steady state conditions. The predetermined temperature profile and/or the predetermined flow rate profile are selected so as to reduce interface states of the oxide/silicon carbide interface with energies near the conduction band of SiC.
137 Citations
28 Claims
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1. A method of fabricating a silicon carbide structure, comprising:
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oxidizing a layer of silicon carbide in an environment comprising N2O using a predetermined temperature profile which includes an oxidation temperature of at least about 1200°
C.; and
wherein the step of oxidizing a layer of silicon carbide in an environment comprising N2O, further comprises oxidizing the layer of silicon carbide utilizing a flow rate profile of N2O which includes a flow rate which provides an initial residence time of the N2O of at least about 11 seconds. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28)
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15. A method of fabricating a silicon carbide structure, comprising:
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oxidizing a layer of silicon carbide in an environment comprising N2O using a predetermined temperature profile which includes an oxidation temperature of at least about 1200°
C.; and
thenannealing the oxidized layer of silicon carbide in an environment comprising N2O at an anneal temperature of greater than about 1100°
C.
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Specification