Metal stack for local interconnect layer
DC CAFCFirst Claim
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1. A method of forming a local interconnect layer in an integrated circuit, the method comprising:
- depositing a first film over an oxide layer, the first film comprising titanium nitride; and
depositing a second film over the first film, the second film comprising tungsten, the first film and the second film forming a metal stack of the local interconnect layer.
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Abstract
In one embodiment, a local interconnect layer in an integrated circuit is formed by depositing a first film over an oxide layer and depositing a second film over the first film. The first film may comprise titanium nitride, while the second film may comprise tungsten, for example. The first film and the second film may be deposited in-situ by sputtering. The second film may be etched using the first film as an etch stop, and the first film may be etched using the oxide layer as an etch stop.
9 Citations
17 Claims
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1. A method of forming a local interconnect layer in an integrated circuit, the method comprising:
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depositing a first film over an oxide layer, the first film comprising titanium nitride; and
depositing a second film over the first film, the second film comprising tungsten, the first film and the second film forming a metal stack of the local interconnect layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14)
etching the second film to stop on the first film; and
etching the first film to stop on the oxide layer.
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10. The method of claim 9 wherein the oxide layer is over a semiconductor substrate.
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11. The method of claim 1 further comprising:
etching the second film with a fluorine-based etchant.
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12. The method of claim 1 further comprising:
etching the first film with a chlorine-based etchant.
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13. The method of claim 1 further comprising:
probing the second film to electrically test the metal stack.
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14. The method of claim 1 further comprising:
depositing a resist material over the second film.
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15. A method of forming a local interconnect layer in an integrated circuit, the method comprising:
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sputtering a first film over an oxide, the first film comprising titanium nitride;
sputtering a second film over the first film in a same tool employed to sputter the first film, the second film comprising tungsten, the first film and the second film forming a metal stack of the local interconnect layer. - View Dependent Claims (16, 17)
probing the second film to electrically test the material stack.
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Specification