Metal stack for local interconnect layer

  • US 6,774,033 B1
  • Filed: 11/04/2002
  • Issued: 08/10/2004
  • Est. Priority Date: 11/04/2002
  • Status: Active Grant
First Claim
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1. A method of forming a local interconnect layer in an integrated circuit, the method comprising:

  • depositing a first film over an oxide layer, the first film comprising titanium nitride; and

    depositing a second film over the first film, the second film comprising tungsten, the first film and the second film forming a metal stack of the local interconnect layer.

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