Stacked MOSFET protection circuit

• US 6,781,805 B1
• Filed: 09/21/2000
• Issued: 08/24/2004
• Est. Priority Date: 09/22/1999
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Urakawa, Yukihiro
• Primary Examiner(s): Sherry, Michael
• Assistant Examiner(s): Laxton, Gary L
• Application Number:
  US09/667,174
• Time in Patent Office: 1,433 Days
• Field of Search: 361/56, 361/91.1, 361/91.7, 361/111, 361/119, 361/91.5
• US Class Current: 361/56
• CPC Class Codes: H01L 27/0251 for MOS devices
• CPC Class Codes: H01L 27/0255 using diodes as protective elements
• CPC Class Codes: H01L 27/0266 using field effect transistors as protective elements
• CPC Class Codes: H03F 1/523 for amplifiers using field-effect devices H03F1/526 takes precedence
• CPC Class Codes: H03K 17/0822 in field-effect transistor switches
• CPC Class Codes: H03K 17/102 in field-effect transistor switches

Abstract

Disclosed is a protection circuit capable of avoiding breakdown of a gate insulating film of a MOSFET and having an appropriate snap-back voltage in terms of reliability. In order to prevent breakdown of a gate insulating film of a MOSFET constituting a stacked protection circuit caused by application of a surge voltage between the gate and the drain of the MOSFET, a single or a plurality of diodes or a MOSFET switch is connected between the gate and the drain of the MOSFET for absorbing the surge voltage. The particular construction permits obtaining a large surge tolerance against the surge voltage entering through, for example, the external power source pad, making it possible to form a protection circuit used in I/O'"'"'s tolerant to other power sources having an appropriate snap-back voltage against the external surge in assuring the reliability of the semiconductor device.

Claims

1. A protection circuit, comprising:

first and second MOS transistors being of the same channel type and having a source of the first MOS transistor connected to a drain of the second MOS transistor;

a clamping circuit having first and second terminals, said first terminal being connected to a gate of the first MOS transistor and said second terminal being connected to a drain of the first MOS transistor, the clamping circuit being turned on in a normal state, and in a case where a surge voltage is applied the clamping circuit being turned on to accelerate breakdown of the first MOS transistor; and

a pad of a semiconductor device connected to the drain of the first MOS transistor, wherein said clamping circuit comprises a plurality of diodes having a cathode of each diode connected to an anode of the adjacent diode, wherein a cathode forming end portion on one side of the plural diodes constitute the first terminal of the clamping circuit, and an anode forming end portion on the other side of the plural diodes constitute the second terminal of the clamping circuit.

2. The protection circuit according to claim 1, wherein the source and gate of the second MOS transistor are connected to the ground.

3. The protection circuit according to claim 1, wherein the clamping circuit serves to maintain constant the potential difference between the first and second terminals when a surge voltage enters the pad.

4. The protection circuit according to claim 1, wherein said pad constitutes a power source pad of a semiconductor device.

5. The protection circuit according to claim 1, wherein said pad constitutes an input/output pad of a semiconductor device.

6. A protection circuit, comprising:

first and second MOS transistors being of the same channel type and having a source of the first MOS transistor connected to a drain of the second MOS transistor, a drain of the first MOS transistor being connected to an external power supply terminal;

a switching circuit having first, second and third terminals, said first terminal being connected to a gate of the first MOS transistor, said second terminal being connected to a drain of the first MOS transistor and the external power source terminal, and said third terminal being connected to an internal power source terminal of a semiconductor device, the internal power source terminal being electrically separated from the external power source terminal, the switching circuit acting in a normal operation state to connect the gate of the first MOS transistor to the internal power source terminal and separate the gate of the first MOS transistor from the external power source terminal, and in a case where a surge voltage is applied the switching circuit acting to connect the gate of the first MOS transistor to the external power source terminal and separate the gate of the first MOS transistor from the internal power source terminal to accelerate breakdown of the first MOS transistor, and a pad connected to the drain of the first MOS transistor.

7. The protection circuit according to claim 6, wherein the source and gate of the second MOS transistor are connected to the ground.

8. The protection circuit according to claim 6, wherein said switching circuit serves to electrically cut-off the second terminal during a normal operation of the semiconductor device and to maintain constant a potential difference between the first and second terminals when a surge voltage enters the pad.

9. The protection circuit according to claim 6, wherein said pad constitutes a power source pad of the semiconductor device.

10. The protection circuit according to claim 6, wherein said pad constitutes an input/output pad of the semiconductor device.

11. The protection circuit according to claim 6, wherein said switching circuit consists of a diode, a cathode of said diode being connected to the gate of the first MOS transistor so as to form the first terminal of the switching circuit, and an anode of said diode forming the second terminal of the switching circuit, and the cathode of said diode being connected to the internal power source of the semiconductor device so as to form the third terminal of the switching circuit.

12. The protection circuit according to claim 11, wherein the cathode of the diode is connected via a resistor circuit to the internal power source of the semiconductor device so as to form the third terminal of the switching circuit.

13. The protection circuit according to claim 6, wherein said switching circuit consists of a plurality of diodes having a cathode of each diode connected to an anode of the adjacent diode, a cathode forming end portion on one side of the diodes being connected to the gate of the first MOS transistor so as to form the first terminal of the switching circuit, an anode forming end portion on the other side of the diodes forming the second terminal of the switching circuit, and the cathode forming end portion on one side of the diodes being connected to the internal power source of the semiconductor device so as to form the third terminal of the switching circuit.

14. The protection circuit according to claim 13, wherein the cathode forming end portion on one side of the diodes are connected via a resistor circuit to the internal power source of the semiconductor device so as to form the third terminal of the switching circuit.

15. The protection circuit according to claim 14, wherein a number n (n being a natural number) of said plural diodes is selected to meet a relationship n>

(Vext−

Vint)/V_F, where Vext denotes a voltage of an external power source of the semiconductor device, Vint denotes a voltage of the internal power source, V_F denotes a forward voltage of the diode.

16. The protection circuit according to claim 6, wherein said switching circuit consists of a third MOS transistor with an inverse conductivity type of the first and second MOS transistors, a source of the third MOS transistor being connected to the gate of the first MOS transistor so as to form the first terminal of the switching circuit, a drain of the third MOS transistor forming the second terminal of the switching circuit, a source of the third MOS transistor being connected to a gate of the third MOS transistor, and a gate of the third MOS transistor being connected via a resistor to the internal power source of the semiconductor device so as to form the third terminal.

17. The protection circuit according to claim 16, wherein a threshold voltage Vth of the third MOS transistor is selected to meet a relationship Vth>

Vext−

Vint, where Vext denotes a voltage of an external power source of the semiconductor device, and Vint denotes a voltage of the internal power source.

18. A protection circuit, comprising:

first and second MOS transistors of a first conductivity type;

third and fourth MOS transistors of a second conductivity type;

first and second diodes;

first and second resistors;

an input/output pad; and

first, second and third power sources,

wherein;

a source of the first MOS transistor is connected to a drain of the second MOS transistor;

a source of the third MOS transistor is connected to a drain of the fourth MOS transistor;

each of a drain of the first MOS transistor and a drain of the third MOS transistor is connected to the input/output pad;

a cathode of the first diode is connected to a gate of the first-MOS transistor and to the first power source via the first resistor;

an anode of the first diode is connected to the input/output pad;

an anode of the second diode is connected to a gate of the third MOS transistor and to the second power source via the second resistor;

a cathode of the second diode is connected to the input/output pad;

a source of the fourth MOS transistor is connected to the third power source; and

a source of the second MOS transistor is connected to the ground.