Reactor with remote plasma system and method of processing a semiconductor substrate

• US 6,783,627 B1
• Filed: 01/20/2000
• Issued: 08/31/2004
• Est. Priority Date: 01/20/2000
• Status: Expired due to Term

• Current Assignee: Kokusai Semiconductor Equipment Corporation (Kokusai Co., Ltd.)
• Original Assignee: Kokusai Semiconductor Equipment Corporation (Kokusai Co., Ltd.)
• Inventors: Mahawili, Imad
• Primary Examiner(s): Goudreau, George A.
• Application Number:
  US09/488,309
• Time in Patent Office: 1,685 Days
• Field of Search: 118/724, 118/725, 118/723.MW, 118/723.I, 118/723.IR, 118/723.ME, 118/723.W, 156/345.33, 156/345.35, 156/345.38, 156/345.48, 156/345.52, 156/345, 216/68, 216/69, 216/79, 216/80, 216/71, 427/532, 427/533, 427/534, 427/574, 427/573, 134/1.2
• US Class Current: 156/345.38
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23C 16/452 by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
• CPC Class Codes: C23C 16/45576 Coaxial inlets for each gas
• CPC Class Codes: C23C 16/45578 Elongated nozzles, tubes with holes
• CPC Class Codes: C23C 8/36 using ionised gases, e.g. ionitriding

Abstract

A reactor for processing a semiconductor substrate includes a reactor housing which defines a processing chamber, and at least one gas injecting assembly. The processing chamber is adapted to support a semiconductor substrate therein. The gas injection assembly injects at least one gas into the processing chamber and onto the substrate and is adapted to ionize the gas injection into the processing chamber to increase the reactivity of the gas with the substrate to thereby enhance the processing of the semiconductor substrate. In preferred form, the gas is ionized into a gas plasma. For example, the gas injection assembly may include a gas plasma generator which ionizes the gas with an electromagnetic field. Preferably, the gas plasma generator ionizes the gas exteriorly of the processing chamber to isolate the substrate from the plasma generator. The gas injection assembly further includes one or more injection tubes, preferably quartz tubes, with each tube including a plurality of orifices through which the ionized gas is delivered into the processing chamber.

Claims

1. A reactor for processing a semiconductor substrate, said reactor comprising:

a reactor housing defining a processing chamber and being adapted to support the substrate in said processing chamber;

a plasma generator for ionizing at least one gas into a gas plasma;

at least one gas injector, said gas injector being adapted to inject the ionized gas into said processing chamber and onto the substrate supported therein for processing the substrate, wherein said housing includes a cover, said gas injector being supported in said cover;

a heater for selectively heating the substrate in said processing chamber; and

a heater housing supported in said reactor housing and enclosing said heater therein.

2. The reactor according to claim 1, wherein said plasma generator generates an electromagnetic field, said electromagnetic field for ionizing the gas into a gas plasma.

3. The reactor according to claim 1, wherein said plasma generator ionizes said gas exteriorly of said processing chamber to isolate the substrate from said electromagnetic field.

4. The reactor according to claim 1, wherein said gas injector comprises a quartz tube.

5. The reactor according to claim 1, wherein said plasma generator is supported by said cover exteriorly of said processing chamber to isolate the substrate from the plasma generator.

6. The reactor according to claim 1, wherein said at least one gas injector comprises at least two gas injectors for injecting at least one gas into said processing chamber.

7. The reactor according to claim 6, wherein said gas injectors are isolated from each other to avoid contamination.

8. The reactor according to claim 7, wherein one of said gas injectors is adapted to inject a first gas into said processing chamber, and another of said injectors is adapted to inject a second gas into said processing chamber.

9. The reactor according to claim 8, wherein said plasma generator ionizes at least one of the first and second gases into a gas plasma for injection into the processing chamber.

10. The reactor according to claim 8, further comprising a heater for heating the substrate in said processing chamber.

11. A reactor for processing a semiconductor substrate, said reacter comprising:

a reactor housing defining a processing chamber and being adapted to support the substrate in said processing chamber;

a plasma generator for ionizing at least one gas into a gas plasma; and

at least one gas injector, said gas injector being adapted to inject the ionized gas into said processing chamber and onto the substrate supported therein for processing the substrate, wherein said housing includes a cover, said gas injector being supported in said cover, said gas injector including a plurality of orifices through which the ionized gas is delivered into said processing chamber.

12. The reactor according to claim 11, wherein said gas injector further includes a supply tube and an injection tube, said supply tube in communication with said injection tube, said supply tube for delivering gas to said injection tube, and said plasma generator for ionizing the gas into a gas plasma in said supply tube.

13. The reactor according to claim 12, wherein said plasma generator includes a generator tube in communication with said supply tube and generates an electromagnetic field in said generator tube to ionize the gas flowing into said supply tube into a gas plasma.

14. The reactor according to claim 13, wherein said supply tube has a larger diameter than said generator tube such that the gas undergoes dissociation and ionization within said supply tube.

15. The reactor according to claim 14, where said supply tube comprises a quartz tube.

16. The reactor according to claim 11, wherein said gas injector includes at least two gas injection tubes, one of said gas injection tubes injecting a first gas in said processing chamber, and a second of said gas injection tubes injecting a second gas in said processing chamber, and said gas injector ionizing at least one of said first and second gases into a gas plasma for injecting into said processing chamber.

17. The reactor according to claim 11, wherein said plasma generator includes a generator tube and a coil inducing an electromagnetic field in said generator tube to ionize the gas flowing through the generator tube, and said generator tube directing the ionized gas to said gas injector for injecting into said processing chamber.

18. The reactor according to claim 17, further comprising a supply tube in communication with said gas injector, said generator tube directing the gas into the supply tube.

19. The reactor according to claim 18, wherein said supply tube has a greater diameter than said generator tube such that the gas under goes dissociation and ionization in said supply tube.

20. A reactor for processing a semiconductor substrate, said reactor comprising:

a reactor housing defining a processing chamber and being adapted to support the substrate in said processing chamber;

a plasma generator for ionizing at least one gas into a gas plasma; and

at least one gas injector, said was injector being adapted to inject the ionized gas into said processing chamber and onto the substrate supported therein for processing the substrate, wherein said gas injector comprises an clongate tube with a plurality of orifices through which the gas is injected into said processing chamber.

21. The reactor according to claim 20, wherein said orifices are uniformly spaced along said elongate tube.

22. The reactor according to claim 20, wherein said plasma generator generates an electromagnetic field, said electromagnetic field for ionizing the gas into a gas plasma.

23. The reactor according to claim 22, wherein said plasma generator ionizes said gas exteriorly of said processing chamber to isolate the substrate from said electromagnetic field.

24. The reactor according to claim 23, wherein said housing includes a cover, said elongate tube being supported in said cover.

25. The reactor according to claim 20, wherein said plasma generator includes a generator tube in communication with said gas injector, said plasma generator generating an electromagnetic field in said generator tube to ionize the gas flowing to said gas injector into a plasma.

26. A reactor for processing a semiconductor substrate, said reactor comprising:

a reactor housing defining a processing chamber and being adapted to support the substrate in said processing chamber;

a plasma generator for ionizing at least one gas into a gas plasma;

at least one gas injector, said gas injector being adapted to inject the ionized gas into said processing chamber and onto the substrate supported therein for processing the substrate, wherein said housing includes a cover, said gas injector being supported in said cover, said at least one gas injector comprising at least two gas injectors for injecting at least one gas into said processing chamber, said gas injectors being isolated from each other to avoid contamination, wherein one of said gas injectors is adapted to inject a first gas into said processing chamber, and another of said gas injectors being adapted to inject a second gas into said processing chamber; and

a heater for heating the substrate in said processing chamber, wherein said heater is enclosed in a heater housing, said heater housing being supported in said reactor housing.

27. The reactor according to claim 26, wherein said heater selectively heats the substrate in said processing chamber.

28. The reactor according to claim 26, wherein said heater housing provides support for the substrate in said reactor housing.

29. The reactor according to claim 26, wherein said heater housing is adapted for supporting the substrate in said processing chamber.

30. The reactor according to claim 29, wherein said heater housing is adapted for rotatably supporting the substrate in said processing chamber.

31. A reactor for processing a semiconductor substrate, said reactor comprising:

a reactor housing defining a processing chamber and having a substrate support for supporting a substrate in said processing chamber; and

a gas injection system including an electromagnetic field generator generating an electromagnetic field exteriorly of said processing chamber and for injecting at least one gas into said processing chamber, said gas injection system passing said at least one gas through said electromagnetic field generated by said electromagnetic field generator wherein said gas is ionized exteriorly of said processing chamber, said gas injection system injecting said ionized gas into said processing chamber and onto the substrate supported therein for processing the substrate, said gas injection system including a gas manifold, said substrate support being adapted to rotate said substrate in said processing chamber whereby said gas manifold distributes the ionized gas uniformly over the substrate, said gas injection system further including an injection tube and a supply tube in communication with said injection tube, said injection tube having a plurality of orifices through which the ionized gas is delivered in said processing chamber, said supply tube for delivering the ionized gas to said injection tube, wherein said supply tube has a larger diameter than said generator tube such that the gas undergoes dissociation within said supply tube.

32. The reactor according to claim 31, wherein said electromagnetic field generator comprises a plasma generator.

33. The reactor according to claim 31, wherein said electromagnetic field generator includes a generator tube in communication with said supply tube, said electromagnetic field generator generating said electromagnetic field in said generator tube to ionize gas flowing into said supply tube into a gas plasma.

34. The reactor according to claim 31, wherein said gas injection tube comprises a quartz tube.

35. The reactor according to claim 31, where said supply tube comprises a quartz tube.

36. The reactor according to claim 31, wherein said gas injection assembly includes at least two gas injection tubes, one of said gas injection tubes injecting a first gas in said processing chamber, and a second of said gas injection tubes injecting a second, gas in said processing chamber, and said gas injection assembly ionizing at least one of said first and second gases into a gas plasma for injecting into said processing chamber.

37. The reactor according to claim 31, wherein said plasma generator includes a generator tube and a coil inducing an electromagnetic field in said generator tube to ionize the gas flowing through the generator tube, and said generator tube directing the ionized gas to said gas injector for injecting into said processing chamber.

38. The reactor according to claim 31, wherein said orifices are uniformly spaced along said elongate tube.

39. The reactor according to claim 31, wherein said housing includes a cover, said gas injector being supported in said cover.

40. The reactor according to claim 31, further comprising a heater for heating the substrate in said processing chamber.

41. The reactor according to claim 31, wherein said heater is enclosed in a heater housing, said heater housing being supported in said reactor housing.

42. The reactor according to claim 31, wherein said heater housing provides support for the substrate in said reactor housing.