Reactor with remote plasma system and method of processing a semiconductor substrate

CAFC
  • US 6,783,627 B1
  • Filed: 01/20/2000
  • Issued: 08/31/2004
  • Est. Priority Date: 01/20/2000
  • Status: Expired due to Term
First Claim
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1. A reactor for processing a semiconductor substrate, said reactor comprising:

  • a reactor housing defining a processing chamber and being adapted to support the substrate in said processing chamber;

    a plasma generator for ionizing at least one gas into a gas plasma;

    at least one gas injector, said gas injector being adapted to inject the ionized gas into said processing chamber and onto the substrate supported therein for processing the substrate, wherein said housing includes a cover, said gas injector being supported in said cover;

    a heater for selectively heating the substrate in said processing chamber; and

    a heater housing supported in said reactor housing and enclosing said heater therein.

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