Method for the manufacture of an insulated gate field effect semiconductor device

  • US 6,784,033 B1
  • Filed: 01/27/1995
  • Issued: 08/31/2004
  • Est. Priority Date: 02/15/1984
  • Status: Expired due to Term
First Claim
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1. A method of manufacturing a semiconductor device having at least a gate electrode, a gate insulating film on the gate electrode, an amorphous semiconductor layer on the gate insulating film and a pair of n+ type semiconductor layers formed on the amorphous semiconductor layer, said method comprising the steps of:

  • placing a substrate having said gate electrode formed thereon in a reaction chamber;

    introducing a film forming gas into said reaction chamber;

    forming said gate insulating film on sais gate electrode by exciting said film forming gas in said reaction chamber;

    introducing a cleaning gas into said reaction chamber after the formation of said gate insulating film;

    etching an unnecessary layer formed on an inside of said reaction chamber by exciting said cleaning gas;

    forming said pair of n+ type semiconductor layers on said amorphous semiconductor layer; and

    forming source and drain electrodes on said pair of n+ type semiconductor layers, wherein an inner edge and an outer edge of said pair of n+ type semiconductor layers are coextensive with an inner edge and an outer edge of said source and drain electrodes.

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