Semiconductor device including a diffusion layer formed between electrode portions

  • US 6,784,557 B2
  • Filed: 12/02/2002
  • Issued: 08/31/2004
  • Est. Priority Date: 12/20/2001
  • Status: Active Grant
First Claim
Patent Images

1. A semiconductor device, comprising:

  • a semiconductor element; and

    a first electrode portion formed on the semiconductor element, wherein said first electrode portion has a thickness in the range of 10 μ

    m to 20 μ

    m.

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