Active matrix substrate, method of manufacturing the same, and image sensor incorporating the same
First Claim
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1. An active matrix substrate, comprising:
- a pixel electrode provided for each of a plurality of pixels constituted by a scanning line and a signal line;
a switching element connected to the scanning line, the signal line, and the pixel electrode;
a storage capacitor electrode constituting a storage capacitor with the pixel electrode therebetween; and
a storage capacitor common wire disposed parallel to the signal line, wherein the signal line, the storage capacitor electrode, and the storage capacitor common wire are fabricated from a single electrode layer through patterning thereof.
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Abstract
A signal line and a pixel capacitor wire that doubles as a pixel capacitor electrode are fabricated parallel to each other from the same electrode layer through patterning thereof. Therefore, no additional steps are required to form the pixel capacitor wire. In such an arrangement, the pixel capacitor wire and the signal line are disposed parallel to each other; therefore, delays of signal transmission in the signal line and crosstalk between pixels are prevented from occurring. The active matrix substrate incorporating this arrangement is suitably used in liquid crystal display devices, image sensors, and the like. Similar advantages are available with an arrangement in which the signal line and the pixel capacitor wire are disposed parallel to each other, and the storage capacitor electrode, which will constitute a storage capacitor with the pixel electrode therebetween, and the scanning line are fabricated from the same electrode layer through patterning thereof.
136 Citations
10 Claims
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1. An active matrix substrate, comprising:
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a pixel electrode provided for each of a plurality of pixels constituted by a scanning line and a signal line;
a switching element connected to the scanning line, the signal line, and the pixel electrode;
a storage capacitor electrode constituting a storage capacitor with the pixel electrode therebetween; and
a storage capacitor common wire disposed parallel to the signal line, wherein the signal line, the storage capacitor electrode, and the storage capacitor common wire are fabricated from a single electrode layer through patterning thereof. - View Dependent Claims (3, 4, 5, 6, 7, 8)
the signal line, the storage capacitor common wire, and the storage capacitor electrode include two deposited layers each constituted by either a transparent electrode film or a metal film. -
5. The active matrix substrate as defined in claim 1, wherein
the pixel electrode opposes the storage capacitor electrode across an insulation film covering the switching element. -
6. The active matrix substrate as defined in claim 5, further comprising an interlayer insulation film interposed between the pixel electrode and the insulation film, wherein
the pixel electrode opposes the storage capacitor electrode in a contact hole formed through the interlayer insulation film. -
7. The active matrix substrate as defined in claim 5, further comprising an interlayer insulation film provided on the insulation film, wherein
the pixel electrode is disposed on the interlayer insulation film, and the interlayer insulation film is provided with a first contact hole for connecting the pixel electrode to the switching element and a second contact hole for accommodating the pixel electrode opposing the storage capacitor electrode. -
8. The active matrix substrate as defined in claim 5, further comprising an interlayer insulation film interposed between the pixel electrode and the insulation film, wherein
the storage capacitor common wire is formed on the storage capacitor electrode so as to be narrower than the storage capacitor electrode, and the pixel electrode opposes the storage capacitor electrode in a contact hole formed through the interlayer insulation film.
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2. An active matrix substrate, comprising:
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a pixel electrode provided in each of a plurality of pixel areas bounded by a scanning line and a signal line;
a switching element connected to the scanning line, the signal line, and the pixel electrode;
a storage capacitor electrode for constituting a storage capacitor with the pixel electrode therebetween; and
a storage capacitor common wire disposed parallel to the signal line and connected to the storage capacitor electrode, wherein the signal line and the storage capacitor electrode are fabricated from a single electrode layer through patterning thereof.
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9. A method of manufacturing an active matrix substrate including:
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a pixel electrode provided for each of a plurality of pixels constituted by a scanning line and a signal line;
a switching element connected to the scanning line, the signal line, and the pixel electrode;
a storage capacitor electrode constituting a storage capacitor with the pixel electrode therebetween; and
a storage capacitor common wire parallel to the signal line, wherein the signal line, the storage capacitor electrode, and the storage capacitor common wire are fabricated from a single electrode layer through patterning thereof, said method comprising the step of fabricating the signal line, the storage capacitor electrode, and the storage capacitor common wire from a single electrode layer through patterning thereof.
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10. An image sensor, comprising:
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an active matrix substrate;
a conversion section for converting incident magnetoelectric radiation to electric charges; and
a bias voltage applicator for causing a storage capacitor to store the electric charges, wherein the active matrix substrate includes;
a pixel electrode provided for each of a plurality of pixels constituted by a scanning line and a signal line;
a switching element connected to the scanning line, the signal line, and the pixel electrode;
a storage capacitor electrode constituting a storage capacitor with the pixel electrode therebetween; and
a storage capacitor common wire disposed parallel to the signal line, wherein the signal line, the storage capacitor electrode, and the storage capacitor common wire are fabricated from a single electrode layer through patterning thereof.
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Specification
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Current AssigneeSharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
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Original AssigneeSharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
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InventorsIzumi, Yoshihiro, Shimada, Takayuki, Nagata, Hisashi
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Primary Examiner(s)Choadhury, Tanifur R.
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Assistant Examiner(s)Duong, Thoi V.
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Application NumberUS09/520,609Time in Patent Office1,638 DaysField of Search349/38, 349/39, 349/43, 349/42, 349/199US Class Current349/39CPC Class CodesG02F 1/136213 Storage capacitors associat...H01L 27/14609 Pixel-elements with integra...
