Semiconductor device with strain relieving bump design

  • US 6,790,759 B1
  • Filed: 07/31/2003
  • Issued: 09/14/2004
  • Est. Priority Date: 07/31/2003
  • Status: Active Grant
First Claim
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1. A method for making a semiconductor device, comprising the steps of:

  • providing a semiconductor substrate having a contact pad;

    forming a passivation layer over the substrate and patterning the passivation layer such that at least a portion of the contact pad is exposed; and

    forming a redistribution conductor having a base portion which is in electrical communication with the contact pad and having a convoluted, laterally extending portion which extends over the passivation layer;

    wherein the laterally extending portion forms a frangible bond to the passivation layer.

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