Semiconductor device with strain relieving bump design
First Claim
1. A method for making a semiconductor device, comprising the steps of:
- providing a semiconductor substrate having a contact pad;
forming a passivation layer over the substrate and patterning the passivation layer such that at least a portion of the contact pad is exposed; and
forming a redistribution conductor having a base portion which is in electrical communication with the contact pad and having a convoluted, laterally extending portion which extends over the passivation layer;
wherein the laterally extending portion forms a frangible bond to the passivation layer.
19 Assignments
0 Petitions
Accused Products
Abstract
A semiconductor device (51) is provided. The device (51) comprises a die (53) having a contact pad (61) thereon, a redistribution conductor (59) having a base portion (64) which is in electrical communication with the contact pad (61) and a laterally extending portion (63), a bumped contact (65) which is in electrical communication with the redistribution conductor (59), and a passivation layer (57) disposed between the laterally extending portion (63) of the redistribution conductor (59) and the die (53). Preferably, the redistribution conductor (59) is convoluted and is adapted to peel or delaminate from the passivation layer (57) under sufficient stress so that it can shift relative to the passivation layer (57) and base portion (64) to relieve mechanical stress between substrate (69) and the die (53). Bump and coiled redistribution conductor (59) accommodating small CTE mis-match strain without failure allows DCA flip-chip to be reliable without underfill or additional assembly process.
46 Citations
18 Claims
-
1. A method for making a semiconductor device, comprising the steps of:
-
providing a semiconductor substrate having a contact pad;
forming a passivation layer over the substrate and patterning the passivation layer such that at least a portion of the contact pad is exposed; and
forming a redistribution conductor having a base portion which is in electrical communication with the contact pad and having a convoluted, laterally extending portion which extends over the passivation layer;
wherein the laterally extending portion forms a frangible bond to the passivation layer.- View Dependent Claims (2, 3, 4, 5, 6)
depositing a metallization layer over the passivation layer;
depositing and patterning a photoresist layer over the metallization layer such that a portion of the metallization layer is exposed; and
electroplating the material of the redistribution conductor onto the exposed portion of the metallization layer.
-
-
6. The method of claim 5, wherein the material of the redistribution conductor is electroplated to a minimum thickness of at least about 3 microns as measured along an axis extending through the center of, and orthogonal to, the laterally extending portion.
-
7. A method for making a semiconductor device, comprising the steps of:
-
providing a semiconductor substrate having a contact pad;
depositing a passivation laser over the substrate and patterning the passivation layer such that at least a portion of the contact pad is exposed;
depositing a metallization layer over the passivation layer;
depositing a photoresist layer over the metallization layer and patterning the photoresist layer such that at least a portion of the metallization layer in the vicinity of the contact pad is exposed; and
electroplating a redistribution conductor onto the exposed portion of the metallization layer such that the redistribution conductor has a base portion which is in electrical communication with the contact pad, and a laterally extending portion. - View Dependent Claims (8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18)
-
Specification