Method for forming contact

  • US 6,790,765 B1
  • Filed: 11/25/2003
  • Issued: 09/14/2004
  • Est. Priority Date: 11/25/2003
  • Status: Active Grant
First Claim
Patent Images

1. A method for forming a contact of a semiconductor device, the contact being positioned on a substrate, the substrate having a bit-line contact area and a gate contact area, the method comprising the steps of:

  • forming an opening on the gate contact area;

    depositing a dielectric layer on the bit-line contact area and the opening;

    coating a photoresist to define a bit-line contact opening on the bit-line contact area and a gate contact opening on the gate contact area;

    etching the dielectric layer while using the photoresist as a mask to form the bit-line contact opening and the gate contact opening;

    removing the photoresist; and

    forming a conductive layer on the bit-line contact opening and the gate contact opening.

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