Asymmetric dot shape for increasing select-unselect margin in MRAM devices

  • US 6,798,691 B1
  • Filed: 06/28/2002
  • Issued: 09/28/2004
  • Est. Priority Date: 03/07/2002
  • Status: Active Grant
First Claim
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1. A magnetic random access memory device configured to store a logic state of a bit with respect to magnetic directions of magnetic layers within a memory cell of the device, wherein the memory cell comprises a magnetic layer having a shape substantially asymmetrical along one dimension of the magnetic layer and substantially symmetrical along another dimension of the magnetic layer.

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