Structure and method for monitoring a semiconductor process, and method of making such a structure

  • US 6,808,944 B1
  • Filed: 07/24/2000
  • Issued: 10/26/2004
  • Est. Priority Date: 07/24/2000
  • Status: Expired due to Term
First Claim
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1. A method of forming a monitoring structure, comprising the step of:

  • depositing a first layer to a predetermined thickness equivalent to a desired trench depth;

    etching the first layer to form monitor trenches that extend through the first layer and stop at an etch stop layer on a monitor wafer; and

    forming a feature in, with, or in relation to the monitor trenches, wherein a process to be monitor with said monitoring structure forms a corresponding non-monitor trench in a different layer or material than the first layer, the feature varies according to a different trench depth.

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