Light-emitting device and manufacturing method thereof
First Claim
1. A light-emitting device, comprising a substrate, a semiconductor light-emitting element mounted on the substrate, and a wavelength converter for absorbing a fundamental wavelength-light radiated from the semiconductor light-emitting element and converting it into a wavelength-converted light having a wavelength longer than the same, characterizing in being composed to allow the front-transmitted-wavelength-converted light transmitted to the front of said wavelength converter, back-reflected-wavelength-converted light converted in wavelength in said wavelength converter and reflected to the back, and back-reflected-fundamental-wavelength light not converted in wavelength in said wavelength converter and reflected to the back, among lights having attained said wavelength converter.
1 Assignment
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Accused Products
Abstract
In the light-emitting device provided with the conventional wavelength converter, colors became irregular, and light radiated to a side of the semiconductor light-emitting element from the wavelength converter could not be used as radiation light, thus lowered the conversion efficiency. The present invention improves the availability of the light from the wavelength converter 5 and resolves the problems by realizing a composition of an LED lamp, wherein a light-radiation-direction-limiter 4a and reflector 4b around it are mounted on a substrate 4, a wavelength converter 5 is mounted on a proper position to cover a part of the light-radiation-direction-limiter 4a and the reflector 4b, and among the light whose wavelength gets converted from fundamental wavelength-light into wavelength-converted light at the wavelength converter 5, both the wavelength-converted light transmitted through the aforementioned wavelength converter 5 and radiated to the front face as direct light, and the wavelength-converted light radiated to the inner face of the wavelength converter 5, by reflecting towards the radiation direction of this light-emitting 1 by the reflector 4b, can be taken out as output light.
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Citations
27 Claims
- 1. A light-emitting device, comprising a substrate, a semiconductor light-emitting element mounted on the substrate, and a wavelength converter for absorbing a fundamental wavelength-light radiated from the semiconductor light-emitting element and converting it into a wavelength-converted light having a wavelength longer than the same, characterizing in being composed to allow the front-transmitted-wavelength-converted light transmitted to the front of said wavelength converter, back-reflected-wavelength-converted light converted in wavelength in said wavelength converter and reflected to the back, and back-reflected-fundamental-wavelength light not converted in wavelength in said wavelength converter and reflected to the back, among lights having attained said wavelength converter.
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3. A light-emitting device, comprising a substrate, a semiconductor light-emitting element mounted on the substrate and a wavelength converter by a phosphor for releasing a wavelength-converted light having a wavelength different from the fundamental wavelength-light radiated from said semiconductor light-emitting element, wherein:
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said substrate is provided with a light-radiation-direction-limiter in the shape of a horn having an inner wall open upward on a substantially central portion having a function to limit the light-radiation-direction from said semiconductor light-emitting element and a reflector around said light-radiation-direction-limiter, said wavelength converter is arranged to cover an opening of said light-radiation-direction-limiter and not to come into contact with a limiter edge, and both of wavelength-converted light transmitted through said wavelength converter and radiated in the irradiation direction of said light-emitting element, fundamental-wavelength light reflected to the inner face of said wavelength converter, among lights having attained said wavelength converter, and/or light reflecting wavelength-converted light to the radiation direction of said light-emitting by said reflector can be taken out as output light. - View Dependent Claims (4, 5, 6, 7, 8, 9, 10, 11, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27)
said wavelength converter is provided with an interval not more than 10 mm from a surface of said semiconductor light-emitting element disposed at a bottom face of the light-radiation-direction-limiter arranged substantially at the central portion of said substrate, and at the same time, disposed to cover said light-radiation-direction-limiter.
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5. The light-emitting device of claim 3, wherein:
a reflection film coated with material comprising one or more of aluminum, silver, barium sulfate and magnesium oxide is formed on said inner wall of said light-radiation-direction-limiter.
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6. The light-emitting device of claim 3, wherein:
said inner wall of said light irradiation direction limiter is open in a range of 10°
to 45°
in respect to the main irradiation axis of said light-emitting device.
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7. The light-emitting device of claim 3, wherein:
a reflection film coated with material comprising one or more of aluminum, silver, barium sulfate and magnesium oxide on a surface thereof is formed on said reflector.
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8. The light-emitting device of claim 3, wherein:
said reflector has its surface coated with the wavelength converter.
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9. The light-emitting device of claims 3, wherein:
said wavelength converter is a fluorescent agent activated by the light radiated from said semiconductor light-emitting element to emit light.
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10. The light-emitting device of claim 3, wherein:
said wavelength converter installed in from of said semiconductor light-emitting element is formed in a ratio of 25 to 75% of the opening area composed by said light-radiation-direction-limiter and reflector arranged on said substrate.
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11. The light-emitting device of claim 3, wherein:
said semiconductor light-emitting element is a compound semiconductor radiating light of 370 nm to 420 nm in light-emitting wavelength.
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14. The light-emitting device of claim 3, wherein:
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a reflection film coated with material comprising one or more of aluminum, silver, barium sulfate and magnesium oxide is formed on said inner wall of said light-radiation-direction-limiter;
said inner wall of said light irradiation direction limiter is open in a range of 10°
to 45°
in respect to the main irradiation axis of said light-emitting device.
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15. The light-emitting device of claim 4, wherein:
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a reflection film coated with material comprising one or more of aluminum, silver, barium sulfate and magnesium oxide is formed on said inner wall of said light-radiation-direction-limiter;
said inner wall of said light irradiation direction limiter is open in a range of 10°
to 45°
in respect to the main irradiation axis of said light-emitting device.
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16. The light-emitting device of claim 14, wherein:
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said reflector has its surface coated with the wavelength converter;
said wavelength converter is a fluorescent agent activated by the light radiated from said semiconductor light-emitting element to emit light;
said wavelength converter installed in front of said semiconductor light-emitting element is formed in a ratio of 25 to 75% of the opening area composed by said light-radiation-direction-limiter and reflector arranged on said substrate;
said semiconductor light-emitting element is a compound semiconductor radiating light of 370 nm to 420 nm in light-emitting wavelength.
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17. The light-emitting device of claim 15, wherein:
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said reflector has its surface, coated with the wavelength converter;
said wavelength converter is a fluorescent agent activated by the light radiated from said semiconductdr light-emitting element to emit light;
said wavelength converter installed in front of said semiconductor light-emitting element is formed in a ratio of 25 to 75% of the opening area composed by said light-radiation-direction-limiter and reflector arranged on said substrate;
said semiconductor light-emitting element is a compound semiconductor radiating light of 370 nm to 420 nm in light-emitting wavelength.
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18. The light-emitting device of claim 14, wherein:
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a reflection film coated with material comprising one or more of aluminum, silver, barium sulfate and magnesium oxide on a surface thereof is formed on said reflector;
said wavelength converter is a fluorescent agent activated by the light radiated from said semiconductor light-emitting element to emit light;
said wavelength converter installed in front of said semiconductor light-emitting element is formed in a ratio of 25 to 75% of the opening area composed by said light-radiation-direction-limiter and reflector arranged on said substrate;
said semiconductor light-emitting element is a compound semiconductor radiating light of 37 nm to 420 nm in light-emitting wavelength.
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19. The light-emitting device of claim 15, wherein:
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a reflection film coated with material comprising one or more of aluminum, silver, barium sulfate and magnesium oxide on a surface thereof is formed on said reflector;
said wavelength converter is a fluorescent agent activated by the light radiated from said semiconductor light-emitting element to emit light;
said wavelength converter installed in front of said semiconductor light-emitting element is formed in a ratio of 25 to 75% of the opening area composed by said light-radiation-direction-limiter and reflector arranged on said substrate;
said semiconductor light-emitting element is a compound semiconductor radiating light of 370 nm to 420 nm in light-emitting wavelength.
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20. The light-emitting device of claim 16, wherein:
an optical thin film for reflecting selectively ultraviolet light is formed on a transparent aperture plate member for sealing the interior of said substrate.
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21. The light-emitting device of claim 17, wherein:
an optical thin film for reflecting selectively ultraviolet light is formed on a transparent aperture plate member for sealing the interior of said substrate.
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22. The light-emitting device of claim 18, wherein:
an optical thin film for reflecting selectively ultraviolet light is formed on a transparent aperture plate member for sealing the interior of said substrate.
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23. The light-emitting device of claim 19, wherein:
an optical thin film for reflecting selectively ultraviolet light is formed on a transparent aperture plate member for sealing the interior of said substrate.
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24. The light-emitting device of claim 16, wherein:
said wavelength converter directs a face to a main irradiation axis of said light-emitting device to said semiconductor light-emitting element at an angle.
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25. The light-emitting device of claim 17, wherein:
said wavelength converter directs a face to a main irradiation axis of said light-emitting device to said semiconductor light-emitting element at an angle.
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26. The light-emitting device of claim 18, wherein:
said wavelength converter directs a face to a main irradiation axis of said light-emitting device to said semiconductor light-emitting element at an angle.
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27. The light-emitting device of claim 19, wherein:
said wavelength converter directs a face to a main irradiation axis of said light-emitting device to said semiconductor light-emitting element at an angle.
Specification