Low-noise CMOS active pixel sensor for imaging arrays with high speed global or row reset

• US 6,809,767 B1
• Filed: 03/16/1999
• Issued: 10/26/2004
• Est. Priority Date: 03/16/1999
• Status: Expired due to Term

• Current Assignee: RE Secured Networks LLC
• Original Assignee: ESS Technology Incorporated (Semiconductor Holding Corp.)
• Inventors: Kozlowski, Lester J., Standley, David L.
• Primary Examiner(s): Vu, Ngoc-Yen
• Assistant Examiner(s): WHIPKEY, JASON T
• Application Number:
  US09/268,913
• Time in Patent Office: 2,051 Days
• Field of Search: 348/300, 348/301, 348/308, 250/208.1
• US Class Current: 348/308
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70

Abstract

An active-pixel low-noise imaging system for implementation in CMOS or in other semiconductor fabrication technologies uses three transistors and a single capacitance per pixel. The first transistor serves as a reset and a transimpedance amplifier to facilitate high impedance and suppress reset noise without requiring expensive on-chip or off-chip memory. The second transistor is an access MOSFET used to read the signal from each pixel and multiplex the signal outputs from an array of pixels. The third MOSFET resets the detector after the integrated signal has been read. Since the detector sense node is “pinned” by the feedback amplifier, reset noise is reduced to that generated by the much smaller feedback capacitance. In addition, by using a small but well-defined feedback capacitor, an amplifier with a narrow bandwidth can be used, provided its unity-gain frequency is sufficient. Since the pixel-base amplifier'"'"'s output capacitance is far smaller than the bus capacitance, the total energy consumed during reset is very small and overall power consumption is kept at a level consistent with battery-powered operation.

Claims

1. An active-pixel sensor circuit having a photodetector, an access transistor, a reset transistor and an amplifier transistor, the circuit comprising:

a feedback capacitor connected between a node and a drain of the amplifier transistor, the node formed by the photodetector and a gate of the amplifier transistor;

a column buffer connected to the access transistor via a column bus; and

wherein the feedback capacitor has a capacitance within the range of approximately 0.1-15 fF.

2. The circuit of claim 1, wherein the photodetector comprises a photodiode formed as a substrate diode having the silicide cleared.

3. The circuit of claim 1, wherein the amplifier transistor is configured as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

4. The circuit of claim 2, wherein the transistors are MOSFETs of identical polarity fabricated in CMOS.

5. An active-pixel sensor circuit having a photodetector, an access transistor, a reset transistor and an amplifier transistor, the circuit comprising:

a feedback capacitor connected between a node and a drain of the amplifier transistor, the node formed by the photodetector and a gate of the amplifier transistor;

a column buffer connected to the access transistor via a column bus; and

wherein the feedback capacitor has a capacitance of approximately 12.6 fF.

6. The circuit of claim 5, wherein the photodetector comprises a photodiode formed as a substrate diode having the silicide cleared.

7. The circuit of claim 5, wherein the amplifier transistor is configured as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

8. The circuit of claim 7, wherein the transistors are MOSFETs of identical polarity fabricated in CMOS.

9. The circuit of claim 5, wherein the photodetector comprises a photodiode formed as a substrate diode having the silicide cleared.

10. The circuit of claim 5, wherein the amplifier transistor is configured as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

11. The circuit of claim 10, wherein the transistors are MOSFETs of identical polarity fabricated in CMOS.

12. An active-pixel sensor circuit having a photodetector, an access transistor, a reset transistor and an amplifier transistor, the circuit comprising:

a feedback capacitor connected between a node and a drain of the amplifier transistor, the node formed by the photodetector and a gate of the amplifier transistor;

a column buffer connected to the access transistor via a column bus; and

wherein the feedback capacitor comprises a gate-drain capacitance of the amplifier transistor.

13. An active pixel sensor circuit comprising:

a photodetector element having a node;

a reset transistor having a source connected to the node and a gate connected to a reset bus;

an amplifier transistor having a source connected to the photodetector, a gate connected to the node, and a drain connected to a drain of the reset transistor;

a feedback capacitor connected between the gate and drain of the amplifier transistor;

a transfer transistor having a drain connected to the drain of the amplifier transistor, a gate connected to a transfer signal bus, and a source connected to a column bus;

a column buffer connected to the column bus; and

wherein the feedback capacitor has a capacitance within the range of approximately 0.1-15.

14. The circuit of claim 13, wherein the photodetector comprises a photodiode formed as a substrate diode having the silicide cleared.

15. The circuit of claim 13, wherein the amplifier transistor operates as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

16. The circuit of claim 15, wherein the transistors are MOSFETs of identical polarity fabricated in CMOS.

26. The circuit of claim 15, wherein the amplifier transistor is configured as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

17. An active pixel sensor circuit comprising:

a photodetector element having a node;

a reset transistor having a source connected to the node and a gate connected to a reset bus;

an amplifier transistor having a source connected to the photodetector, a gate connected to the node, and a drain connected to a drain of the reset transistor;

a feedback capacitor connected between the gate and drain of the amplifier transistor;

a transfer transistor having a drain connected to the drain of the amplifier transistor, a gate connected to a transfer signal bus, and a source connected to a column bus;

a column buffer connected to the column bus; and

wherein the feedback capacitor has a capacitance of approximately 12.6 fF.

18. The circuit of claim 17, wherein the photodetector comprises a photodiode formed as a substrate diode having the silicide cleared.

19. The circuit of claim 17, wherein the amplifier transistor operates as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

20. The circuit of claim 19, wherein the transistors are MOSFETs of identical polarity fabricated in CMOS.

21. An active pixel sensor circuit comprising:

a photodetector element having a node;

a reset transistor having a source connected to the node and a gate connected to a reset bus;

an amplifier transistor having a source connected to the photodetector, a gate connected to the node, and a drain connected to a drain of the reset transistor;

a feedback capacitor connected between the gate and drain of the amplifier transistor;

a transfer transistor having a drain connected to the drain of the amplifier transistor, a gate connected to a transfer signal bus, and a source connected to a column bus;

a column buffer connected to the column bus; and

wherein the feedback capacitor comprises a gate-drain capacitance of the amplifier transistor.

22. The circuit of claim 21, wherein the photodetector comprises a photodiode formed as a substrate diode having the silicide cleared.

23. The circuit of claim 21, wherein the amplifier transistor operates as a distributed transimpedance amplifier having capacitive feedback provided by the feedback capacitor.

24. The circuit of claim 23, wherein the transistors are MOSFETs of identical polarity fabricated in CMOS.

25. An active pixel sensor circuit comprising:

a photodetector element having a node;

a reset transistor having a source connected to the node and a rate connected to a reset bus;

an amplifier transistor having a source connected to the photodetector, a gate connected to the node, and a drain connected to a drain of the reset transistor;

a feedback capacitor connected between the pate and drain of the amplifier transistor;

a transfer transistor having a drain connected to the drain of the amplifier transistor, a gate connected to a transfer signal bus, and a source connected to a column bus;

a column buffer connected to the column bus; and

wherein the feedback capacitor comprises a gate-drain capacitance of the amplifier transistor.