Low electrical resistance n-type mirror for optoelectronic devices

  • US 6,810,065 B1
  • Filed: 11/28/2001
  • Issued: 10/26/2004
  • Est. Priority Date: 11/28/2000
  • Status: Active Grant
First Claim
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1. An optoelectronic device comprising:

  • an active region sandwiched between an upper mirror and a lower mirror, wherein at least one of said upper and lower mirrors comprises plurality of mirror periods wherein at least a portion of said mirror periods comprise alternating layers of a first material having a first index of refraction and a second material having a second index of refraction with a step graded interfacial transition layer there between.

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