Apparatus for atomic layer chemical vapor deposition

  • US 6,812,157 B1
  • Filed: 05/20/2002
  • Issued: 11/02/2004
  • Est. Priority Date: 06/24/1999
  • Status: Expired due to Fees
First Claim
Patent Images

1. An atomic layer deposition (ALD) reactor, comprising:

  • a substantially cylindrical chamber;

    a substrate mounted within the chamber; and

    at least one injection tube mounted within the chamber having a plurality of apertures along one side that direct gas emanating from the apertures towards the substrate, wherein the substrate is covered with a gas deposition sequence comprising a first reactive gas (A), an inert gas (P), the second reactive gas (B), and the inert gas (P), wherein while gas is pulsed from the injection tube, the substrate is stationery within the chamber and the at least one injector tube is rotated in a longitudinal plane in relation to the substrate to ensure complete and uniform coverage of the substrate by the gas.

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