Surge protection circuit for semiconductor devices

  • US 6,812,528 B2
  • Filed: 06/06/2001
  • Issued: 11/02/2004
  • Est. Priority Date: 06/07/2000
  • Status: Active Grant
First Claim
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1. A surge protection device, comprising:

  • an insulator;

    a gate electrode embedded in said insulator;

    a source electrode and a drain electrode on said insulator, said source and drain electrodes respectively forming first and second capacitances with said gate electrode; and

    a semiconductor island on said insulator, said island forming a channel region between said source and drain electrodes and forming a third capacitance with said gate electrode, said third capacitance being smaller than either of said first and second capacitances, said source and drain electrodes being adapted for connection to external circuitry for establishing a low-impedance path when the external circuitry is subjected to a surge potential.

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