Semiconductor structures employing strained material layers with defined impurity gradients and methods for fabricating same

  • US 6,831,292 B2
  • Filed: 09/20/2002
  • Issued: 12/14/2004
  • Est. Priority Date: 09/21/2001
  • Status: Active Grant
First Claim
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1. A semiconductor structure comprising:

  • a substrate; and

    at least one strained layer disposed on the substrate, thereby defining an interface therebetween, the at least one strained layer having a distal zone away from the interface;

    wherein the substrate, the interface, and the at least one strained layer are characterized at least in part by an impurity gradient having a value substantially equal to zero in the distal zone.

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