×

Multi-trench region for accumulation of photo-generated charge in a CMOS imager

  • US 6,838,742 B2
  • Filed: 02/27/2004
  • Issued: 01/04/2005
  • Est. Priority Date: 08/28/2000
  • Status: Expired due to Term
First Claim
Patent Images

1. A pixel sensor cell for use in an imaging device, said pixel sensor cell comprising:

  • a plurality of trench photosensors formed in a doped layer of a first conductivity type of a substrate;

    a reset transistor formed in said doped layer and a floating diffusion region of a second conductivity type formed in said doped layer between said plurality of trench photosensors and the reset transistor for receiving charges from said plurality of trench photosensors, said reset transistor operating to periodically reset a charge level of said floating diffusion region; and

    an output transistor having a gate electrically connected to the floating diffusion region.

View all claims
  • 2 Assignments
Timeline View
Assignment View
    ×
    ×