Metal oxide semiconductor field effect transistors (MOSFETS) used in ink-jet head chips and method for making the same

  • US 6,841,830 B2
  • Filed: 07/28/2003
  • Issued: 01/11/2005
  • Est. Priority Date: 12/31/2002
  • Status: Active Grant
First Claim
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1. A metal oxide semiconductor field effect transistor (MOSFET) used in ink-jet head chips, which is connected to an inkjet actuator for controlling the electrical voltage or current passing through the inkjet actuator;

  • the MOSFET comprising at least a source, a drain, and a gate and being characterized in that;

    the MOSFET is covered with a borophosphosilicate glass (BPSG);

    at least one contact hole through the BPSG is filled with a plug material at the position corresponding to the drain;

    the gate length is between 0.35 μ

    m and 3.5 μ

    m, and the sum of junction depths at the source and the drain is 0.2 to 0.75 times that of the gate length.

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