CMP process

  • US 6,844,262 B1
  • Filed: 08/31/2001
  • Issued: 01/18/2005
  • Est. Priority Date: 08/31/2001
  • Status: Expired due to Term
First Claim
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1. A method of making a semiconductor structure, comprising:

  • measuring a pattern density of a layer;

    followed by calculating a first polish time, sufficient to planarize the layer on a semiconductor substrate;

    polishing the layer for said first polish time, to planarize the layer; and

    polishing the layer to a predetermined thickness.

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