Optical semiconductor device comprising a multiple quantum well structure

  • US 6,849,881 B1
  • Filed: 11/20/2000
  • Issued: 02/01/2005
  • Est. Priority Date: 11/19/1999
  • Status: Active Grant
First Claim
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1. An optical semiconductor device with a multiple quantum well structure, comprising:

  • at least one combination of alternating well layers and barrier layers, both comprising various semiconductor layers, said well layers comprising a first composition based on a nitride semiconductor material with a first electron energy, said barrier layers comprising a second composition of a nitride semiconductor material with electron energy which is higher in comparison with the first electron energy, and a radiation-active quantum well layer for which the well layers and barrier layers form a superlattice, the well layers of the first composition are essentially non-radiating well layers below the radiation-active quantum well layer.

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