Method and apparatus for adding/droping optical signals in a semiconductor substrate

• US 6,856,732 B2
• Filed: 09/28/2001
• Issued: 02/15/2005
• Est. Priority Date: 06/13/2001
• Status: Active Grant

• Current Assignee: Intel Corporation
• Original Assignee: Intel Corporation
• Inventors: Liao, Ling, Liu, Ansheng, Paniccia, Mario J., Alduino, Andrew C., Nicolaescu, Remus
• Primary Examiner(s): Dunn, Drew A.
• Assistant Examiner(s): Pritchett, Joshua L
• Application Number:
  US09/967,365
• Publication Number:
  US 20020197012A1
• Time in Patent Office: 1,236 Days
• Field of Search: 385/24, 385/31, 385/37, 385/42, 385/44, 385/15, 398/82, 398/83, 398/84, 398/79, 398/87, 398/89
• US Class Current: 385/38
• CPC Class Codes: G02B 2006/12097 Ridge, rib or the like
• CPC Class Codes: G02B 2006/12135 Temperature control
• CPC Class Codes: G02B 6/124 Geodesic lenses or integrated gratings
• CPC Class Codes: G02F 1/0147 based on thermo-optic effects G02F1/132 takes precedence
• CPC Class Codes: G02F 1/025 in an optical waveguide structure G02F1/017, G02F1/2257 take precedence
• CPC Class Codes: G02F 2201/307 Reflective grating, i.e. Bragg grating

Abstract

A semiconductor-based tunable add/drop method and apparatus. In one aspect of the present invention, a method according to an embodiment of the present invention includes splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate. Portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate. In another embodiment, the portions of the second and third optical beams having a tunable wavelength are reflected back to the first 3 dB optical coupler with first and second pluralities of modulated charged regions. Portions of the second and third optical beams not reflected are directed to a second 3 dB optical coupler disposed in the semiconductor substrate. The portions of the second and third optical beams not reflected are combined into a fourth optical beam with the second 3 dB optical coupler.

Claims

1. A method, comprising:

splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate;

reflecting portions of the second and third optical beams having a tunable wavelength back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate and oriented substantially perpendicular to the semiconductor substrate;

directing portions of the second and third optical beams not reflected by the first and second pluralities of silicon and polysilicon interfaces to a second 3 dB optical coupler disposed in the semiconductor substrate; and

combining the portions of the second and third optical beams not reflected by the first and second pluralities of silicon and polysilicon interfaces into a fourth optical beam with the second 3 dB optical coupler.

2. The method of claim 1 further comprising adjusting a temperature of the first and second pluralities of silicon and polysilicon interfaces so as to adjust the tunable wavelength.

3. The method of claim 1 further comprising combining the portions of the second and third optical beams having the tunable wavelength reflected from the first and second pluralities of silicon and polysilicon interfaces with the first 3 dB optical coupler to output a fifth optical beam from the first 3 dB optical coupler.

4. The method of claim 1 further comprising:

splitting a sixth optical beam having the tunable wavelength into seventh and eighth optical beams with the second 3 dB optical coupler;

reflecting the seventh and eighth optical beams having the tunable wavelength back to the second 3 dB optical coupler with the first and second pluralities of silicon and polysilicon interfaces, respectively;

combining the seventh and eighth optical beams reflected by the first and second pluralities of silicon and polysilicon interfaces into the fourth optical beam with the second 3 dB optical coupler.

5. The method of claim 4 further comprising adjusting a phase of the seventh optical beam so as to correct an optical path imbalance between respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

6. The method of claim 5 wherein adjusting the phase of the seventh optical beam comprises adjusting a temperature of the semiconductor substrate including the optical path through which the seventh optical beam propagates.

7. The method of claim 1 further comprising adjust a phase of the second optical beam so as to correct an optical path imbalance between respective optical paths through which the second and third optical beams are optically coupled to propagate.

8. The method of claim 7 wherein adjusting the phase of the second optical beam comprises adjusting a temperature of the semiconductor substrate including the optical path through which the second optical beam propagates.

9. The method of claim 1 wherein reflecting portions of the second and third optical beams comprises perturbing an effective index of refraction a plurality of times along the semiconductor substrate to form first and second tunable Bragg gratings, respectively, disposed in the semiconductor substrate.

10. A method, comprising:

splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate;

reflecting portions of the second and third optical beams having a tunable wavelength back to the first 3 dB optical coupler with first and second pluralities of charge modulated regions, respectively;

directing portions of the second and third optical beams not reflected by the first and second pluralities of charge modulated regions to a second 3 dB optical coupler disposed in the semiconductor substrate; and

combining the portions of the second and third optical beams not reflected by the first and second pluralities of charged modulated regions into a fourth optical beam with the second 3 dB optical coupler.

11. The method of claim 10 further comprising adjusting a charge concentration in the first and second pluralities of charge modulated regions in response to a modulation signal so as to adjust the tunable wavelength.

12. The method of claim 10 further comprising combining the portions of the second and third optical beams having the tunable wavelength reflected from the first and second pluralities of charge modulated regions with the first 3 dB optical coupler to output a fifth optical beam from the first 3 dB optical coupler.

13. The method of claim 10 further comprising:

splitting a sixth optical beam having the tunable wavelength into seventh and eighth optical beams with the second 3 dB optical coupler;

reflecting the seventh and eighth optical beams having the tunable wavelength back to the second 3 dB optical coupler with the first and second pluralities of charge modulated regions, respectively;

combining the seventh and eighth optical beams reflected by the first and second pluralities of charge modulated regions into the fourth optical beam with the second 3 dB optical coupler.

14. The method of claim 13 further comprising adjust a phase of the seventh optical beam so as to correct an optical path imbalance between respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

15. The method of claim 10 further comprising adjust a phase of the second optical beam so as to correct an optical path imbalance between respective optical paths through which the second and third optical beams are optically coupled to propagate.

16. An apparatus, comprising:

first and second 3 dB optical couplers disposed in a semiconductor substrate, the first 3 dB optical coupler optically coupled to receive a first optical beam and split the first optical beam into second and third optical beams having an approximately π

/2 phase difference, the second optical coupler optically coupled to receive the second and third optical beams and output a fourth optical beam; and

first and second tunable Bragg gratings disposed in the semiconductor substrate having respective optical paths through which the second and third optical beams are optically coupled to propagate between the first and second 3 dB optical couplers, the first and second tunable Bragg gratings each including a plurality of silicon and polysilicon interfaces along the respective optical paths such that there are a plurality of perturbations of a refractive index of the semiconductor substrate along the respective optical paths, the plurality of silicon and polysilicon interfaces oriented substantially perpendicular to the semiconductor substrate, the first and second tunable Bragg gratings optically coupled to reflect back to the first 3 dB optical coupler a portion of the second and third optical beams having a tunable wavelength.

17. The apparatus of claim 16 wherein the first optical beam includes multiple wavelengths including the tunable wavelength, wherein the tunable wavelength is dropped from the second and third optical beams as a result of the reflection of the portion of the second and third optical beams by the first and second tunable Bragg gratings, wherein a fifth optical beam including the tunable wavelength resulting from the reflection of the portion of the second and third optical beams by the first and second tunable Bragg gratings is output from the first 3 dB optical coupler.

18. The apparatus of claim 16 wherein the second 3 dB optical coupler is further optically coupled to receive a sixth optical beam having the tunable wavelength, the second 3 dB optical coupler to split the sixth optical beam into seventh and eighth optical beams having an approximately π

/2 phase difference, the first and second tunable Bragg gratings optically coupled to receive the seventh and eighth optical beams from the second 3 dB optical coupler and reflect back to the second 3 dB optical coupler the seventh and eighth optical beams having the tunable wavelength, the fourth optical beam output by the second 3 dB optical coupler to have multiple wavelengths including the tunable wavelength of the sixth optical beam.

19. The apparatus of claim 16 wherein the first and second tunable Bragg gratings include first and second heaters, respectively, disposed proximate to the semiconductor substrate including the plurality of silicon and polysilicon interfaces, wherein a temperature of the semiconductor substrate including the plurality of silicon and polysilicon interfaces is responsive to the first and second heaters, respectively, wherein the tunable wavelength is responsive to the temperature of the semiconductor substrate including the plurality of silicon and polysilicon interfaces.

20. The apparatus of claim 18 further comprising:

a first phase adjuster optically coupled to adjust a phase of the second optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the second and third optical beams are optically coupled to propagate; and

a second phase adjuster optically coupled to adjust a phase of the seventh optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

21. The apparatus of claim 20 wherein the first and second phase adjusters comprises a third and fourth heaters, respectively, disposed proximate to the semiconductor substrate including the optical paths through which the second and seventh optical beams propagate.

22. The apparatus of claim 16 wherein the first and second 3 dB optical couplers include 2×

2 multimode interference (MMI) couplers or waveguide couplers disposed in the semiconductor substrate.

23. The apparatus of claim 22 wherein the 2×

2 MMI couplers have inputs and outputs that include tapered rib waveguides disposed in the semiconductor substrate.

24. An apparatus, comprising:

first and second 3 dB optical couplers disposed in a semiconductor substrate, the first 3 dB optical coupler optically coupled to receive a first optical beam and split the first optical beam into second and third optical beams having an approximately π

/2 phase difference, the second optical coupler optically coupled to receive the second and third optical beams and output a fourth optical beam; and

first and second tunable Bragg gratings disposed in the semiconductor substrate having respective optical paths through which the second and third optical beams are optically coupled to propagate between the first and second 3 dB optical couplers, the first and second tunable Bragg gratings each including a plurality of charge modulated regions along the respective optical paths to establish a plurality of perturbations of a refractive index of the semiconductor substrate along the respective optical paths, the first and second tunable Bragg gratings optically coupled to reflect back to the first 3 dB optical coupler a portion of the second and third optical beams having a tunable wavelength.

25. The apparatus of claim 24 further comprising:

an insulating layer disposed proximate to the semiconductor substrate; and

a plurality of conductive elements disposed proximate to the insulating layer such that the insulating layer is disposed between the plurality of conductive elements and the semiconductor substrate, the plurality of conductive elements coupled to receive a modulation signal, the plurality of charge modulated regions coupled to be modulated in response to the modulation signal.

26. The apparatus of claim 24 wherein the first optical beam includes multiple wavelengths including the tunable wavelength, wherein the tunable wavelength is dropped from the second and third optical beams as a result of the reflection of the portion of the second and third optical beams by the first and second tunable Bragg gratings, wherein a fifth optical beam including the tunable wavelength resulting from the reflection of the portion of the second and third optical beams by the first and second tunable Bragg gratings is output from the first 3 dB optical coupler.

27. The apparatus of claim 24 wherein the second 3 dB optical coupler is further optically coupled to receive a sixth optical beam having the tunable wavelength, the second 3 dB optical coupler to split the sixth optical beam into seventh and eighth optical beams having an approximately π

/2 phase difference, the first and second tunable Bragg gratings optically coupled to receive the seventh and eighth optical beams from the second 3 dB optical coupler and reflect back to the second 3 dB optical coupler the seventh and eighth optical beams having the tunable wavelength, the fourth optical beam output by the second 3 dB optical coupler to have multiple wavelengths including the tunable wavelength of the sixth optical beam.

28. The apparatus of claim 27 further comprising:

a first phase adjuster optically coupled to adjust a phase of the second optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the second and third optical beams are optically coupled to propagate; and

a second phase adjuster optically coupled to adjust a phase of the seventh optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

29. The apparatus of claim 24 wherein the first and second 3 dB optical couplers include 2×

2 multimode interference (MMI) couplers or waveguide couplers disposed in the semiconductor substrate.

30. The apparatus of claim 29 wherein the 2×

2 MMI couplers have inputs and outputs that include tapered rib waveguides disposed in the semiconductor substrate.

31. A method, comprising:

splitting a first optical beam having multiple wavelengths into second and third optical beams with a first 3 dB optical coupler disposed in a semiconductor substrate;

reflecting portions of the second and third optical beams having a tunable wavelength back to the first 3 dB optical coupler with first and second pluralities of silicon and polysilicon interfaces, respectively, disposed along the semiconductor substrate and oriented substantially perpendicular to the semiconductor substrate;

directing portions of the second and third optical beams having the tunable wavelength reflected by the first and second pluralities of silicon and polysilicon interfaces back to the first 3 dB optical coupler; and

combining the portions of the second and third optical beams having the tunable wavelength reflected by the first and second pluralities of silicon and polysilicon interfaces into a fourth optical beam with the first 3 dB optical coupler.

32. The method of claim 31 further comprising adjusting a temperature of the first and second pluralities of silicon and polysilicon interfaces so as to adjust the tunable wavelength.

33. The method of claim 31 further comprising:

directing portions of the second and third optical beams not reflected by the first and second pluralities of silicon and polysilicon interfaces to a second 3 dB optical coupler disposed in the semiconductor substrate; and

combining the portions of the second and third optical beams not reflected by the first and second pluralities of silicon and polysilicon interfaces into a fifth optical beam with the second 3 dB optical coupler.

34. The method of claim 33 further comprising:

splitting a sixth optical beam having the tunable wavelength into seventh and eighth optical beams with the second 3 dB optical coupler;

reflecting the seventh and eighth optical beams having the tunable wavelength back to the second 3 dB optical coupler with the first and second pluralities of silicon and polysilicon interfaces, respectively;

combining the seventh and eighth optical beams reflected by the first and second pluralities of silicon and polysilicon interfaces into the fifth optical beam with the second 3 dB optical coupler.

35. The method of claim 34 further comprising adjusting a phase of the seventh optical beam so as to correct an optical path imbalance between respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

36. The method of claim 35 wherein adjusting the phase of the seventh optical beam comprises adjusting a temperature of the semiconductor substrate including the optical path through which the seventh optical beam propagates.

37. The method of claim 31 further comprising adjusting a phase of the second optical beam so as to correct an optical path imbalance between respective optical paths through which the second and third optical beams are optically coupled to propagate.

38. The method of claim 37 wherein adjusting the phase of the second optical beam comprises adjusting a temperature of the semiconductor substrate including the optical path through which the second optical beam propagates.

39. The method of claim 31 wherein reflecting portions of the second and third optical beams comprises perturbing an effective index of refraction a plurality of times along the semiconductor substrate to form first and second tunable Bragg gratings, respectively, disposed in the semiconductor substrate.

40. An apparatus, comprising:

a first 3 dB optical coupler disposed in a semiconductor substrate, the first 3 dB optical coupler optically coupled to receive a first optical beam and split the first optical beam into second and third optical beams having an approximately π

/2 phase difference; and

first and second tunable Bragg gratings disposed in the semiconductor substrate having respective optical paths through which the second and third optical beams are optically coupled to propagate from the first 3 dB optical couplers to the first and second tunable Bragg gratings, the first and second tunable Bragg gratings each including a plurality of silicon and polysilicon interfaces along the respective optical paths such that there are a plurality of perturbations of a refractive index of the semiconductor substrate along the respective optical paths, the plurality of silicon and polysilicon interfaces oriented substantially perpendicular to the semiconductor substrate, the first and second tunable Bragg gratings optically coupled to reflect back to the first 3 dB optical coupler portions of the second and third optical beams having a tunable wavelength, wherein the first 3 dB optical coupler is optically coupled to combine the portions of the second and third optical beams having the tunable wavelength into a fourth optical beam having the tunable wavelength.

41. The apparatus of claim 40 further comprising a second 3 dB coupler optically coupled to the first and second Bragg gratings to receive portions of the second and third optical beams not having the tunable wavelength, the second 3 dB optical coupler optically coupled to combine the portions of the not having the tunable wavelength into a fifth optical beam output by the second 3 dB optical coupler.

42. The apparatus of claim 41 wherein the second 3 dB optical coupler is further optically coupled to receive a sixth optical beam having the tunable wavelength, the second 3 dB optical coupler to split the sixth optical beam into seventh and eighth optical beams having an approximately π

/2 phase difference, the first and second tunable Bragg gratings optically coupled to receive the seventh and eighth optical beams from the second 3 dB optical coupler and reflect back to the second 3 dB optical coupler the seventh and eighth optical beams having the tunable wavelength, the fifth optical beam output by the second 3 dB optical coupler to have multiple wavelengths including the tunable wavelength of the sixth optical beam.

43. The apparatus of claim 42 further comprising:

a first phase adjuster optically coupled to adjust a phase of the second optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the second and third optical beams are optically coupled to propagate; and

a second phase adjuster optically coupled to adjust a phase of the seventh optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

44. The apparatus of claim 43 wherein the first and second phase adjusters comprises a third and fourth heaters, respectively, disposed proximate to the semiconductor substrate including the optical paths through which the second and seventh optical beams propagate.

45. The apparatus of claim 41 wherein the first and second 3 dB optical couplers include 2×

2 multimode interference (MMI) couplers or waveguide couplers disposed in the semiconductor substrate.

46. The apparatus of claim 45 wherein the 2×

2 MMI couplers have inputs and outputs that include tapered rib waveguides disposed in the semiconductor substrate.

47. The apparatus of claim 40 wherein the first and second tunable Bragg gratings include first and second heaters, respectively, disposed proximate to the semiconductor substrate including the plurality of silicon and polysilicon interfaces, wherein a temperature of the semiconductor substrate including the plurality of silicon and polysilicon interfaces is responsive to the first and second heaters, respectively, wherein the tunable wavelength is responsive to the temperature of the semiconductor substrate including the plurality of silicon and polysilicon interfaces.

48. An apparatus, comprising:

a first 3 dB optical couplers disposed in a semiconductor substrate, the first 3 dB optical coupler optically coupled to receive a first optical beam and split the first optical beam into second and third optical beams having an approximately π

/2 phase difference; and

first and second tunable Bragg gratings disposed in the semiconductor substrate having respective optical paths through which the second and third optical beams are optically coupled to propagate from the first 3 dB optical couplers to the first and second tunable Bragg gratings, the first and second tunable Bragg gratings each including a plurality of charge modulated regions along the respective optical paths to establish a plurality of perturbations of a refractive index of the semiconductor substrate along the respective optical paths, the first and second tunable Bragg gratings optically coupled to reflect back to the first 3 dB optical coupler portions of the second and third optical beams having a tunable wavelength, wherein the first 3 dB optical coupler is optically coupled to combine the portions of the second and third optical beams having the tunable wavelength into a fourth optical beam having the tunable wavelength.

49. The apparatus of claim 48 further comprising:

an insulating layer disposed proximate to the semiconductor substrate; and

a plurality of conductive elements disposed proximate to the insulating layer such that the insulating layer is disposed between the plurality of conductive elements and the semiconductor substrate, the plurality of conductive elements coupled to receive a modulation signal, the plurality of charge modulated regions coupled to be modulated in response to the modulation signal.

50. The apparatus of claim 48 further comprising a second 3 dB coupler optically coupled to the first and second Bragg gratings to receive portions of the second and third optical beams not having the tunable wavelength, the second 3 dB optical coupler optically coupled to combine the portions of the not having the tunable wavelength into a fifth optical beam output by the second 3 dB optical coupler.

51. The apparatus of claim 50 wherein the second 3 dB optical coupler is further optically coupled to receive a sixth optical beam having the tunable wavelength, the second 3 dB optical coupler to split the sixth optical beam into seventh and eighth optical beams having an approximately π

/2 phase difference, the first and second tunable Bragg gratings optically coupled to receive the seventh and eighth optical beams from the second 3 dB optical coupler and reflect back to the second 3 dB optical coupler the seventh and eighth optical beams having the tunable wavelength, the fifth optical beam output by the second 3 dB optical coupler to have multiple wavelengths including the tunable wavelength of the sixth optical beam.

52. The apparatus of claim 51 further comprising:

a first phase adjuster optically coupled to adjust a phase of the second optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the second and third optical beams are optically coupled to propagate; and

a second phase adjuster optically coupled to adjust a phase of the seventh optical beam, the phase adjuster optically coupled to correct an optical path imbalance between the respective optical paths through which the seventh and eighth optical beams are optically coupled to propagate.

53. The apparatus of claim 50 wherein the first and second 3 dB optical couplers include 2×

2 multimode interference (MMI) couplers or waveguide couplers disposed in the semiconductor substrate.

54. The apparatus of claim 53 wherein the 2×

2 MMI couplers have inputs and outputs that include tapered rib waveguides disposed in the semiconductor substrate.