Semiconductor diode device

• US 6,858,876 B2
• Filed: 12/10/2001
• Issued: 02/22/2005
• Est. Priority Date: 12/12/2000
• Status: Expired due to Fees

• Current Assignee: FLIR Systems Trading Belgium (Teledyne Technologies Incorporated)
• Original Assignee: Qinetiq Limited (QinetiQ Group PLC)
• Inventors: Gordon, Neil Thomson, White, Anthony Michael, Elliott, Charles Thomas
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Ho, Tu-Tu
• Application Number:
  US10/450,310
• Publication Number:
  US 20040036093A1
• Time in Patent Office: 1,170 Days
• Field of Search: 257/96, 257/80, 257/87, 257/101
• US Class Current: 257/96
• CPC Class Codes: H01L 29/868 PIN diodes
• CPC Class Codes: H01L 31/02966 including ternary compounds, e.g. HgCdTe
• CPC Class Codes: H01L 31/101 Devices sensitive to infrared, visible or ultraviolet radiation
• CPC Class Codes: H01L 31/105 the potential barrier being of the PIN type

Abstract

A multi-layer semiconductor diode having a layer of wide bandgap material located between the active layer and a first contact zone, where the active layer and additional wide bandgap layer are of one dopant type, and the first contact zone is of the opposite dopant type. A specific embodiment of the invention comprises a stack formed from a first contact zone (4) of p-type material, a lightly doped p-type active layer (2), an additional p layer (20) and a second contact zone (6) of n-type material. The diode may be used as an infrared detector or a negative luminescent source.

Claims

1. A semiconductor diode comprising;

a first contact zone;

an active layer;

a second contact zone;

the first contact zone being doped with the opposite dopant type than that of the active layer;

the second contact zone being doped with the same dopant type as the active layer;

the first contact zone, the active layer and the second contact zone being arranged in a stack such that the active layer is located between the first contact zone and the second contact zone;

wherein the semiconductor diode structure further comprises an additional layer which is doped with the same dopant type as the active layer and which has a wider bandgap than the active layer and, wherein the additional layer is located between the active layer and the first contact zone and wherein the additional layer has a band gap lower than that of the second contact zone.

2. A semiconductor diode structure as claimed in claim 1 where, on application of a reverse bias voltage, at least one excluding interface is formed between the active layer and the second contact zone.

3. A semiconductor diode structure as claimed in claim 1 where, on application of a reverse bias voltage, at least one extracting interface is formed between the active layer and the first contact zone.

4. A semiconductor diode as claimed in claim 1 wherein the second contact zone consists of;

a heavily doped layer and

a buffer layer of lightly doped material;

the heavily doped layer and buffer layer being doped with the same dopant type,

the heavily doped layer being located furthest from the active layer, and

the arrangement being such that two excluding interfaces are formed between the active layer and the buffer layer of lightly doped material and between the buffer layer of lightly doped material and the heavily doped layer.

6. A semiconductor diode as claimed in claim 1 wherein the first contact zone consists of;

a heavily doped layer and

a buffer layer of lightly doped material;

the heavily doped layer and buffer layer being doped with the same dopant type,

the heavily doped layer being located furthest from the active layer, and

the arrangement being such that two extracting interfaces are formed between the active layer and the buffer layer of lightly doped material and between the buffer layer of lightly doped material and the heavily doped layer.

7. The semiconductor diode as claimed in claim 6 wherein the doping concentration in the heavily doped layer of the first contact zone is greater than 2×

10¹⁷ cm<sup>−

3</sup>.

8. The semiconductor diode as claimed in claim 4 wherein the doping concentration in the heavily doped layer of the second contact zone is greater than 2×

10¹⁷ cm<sup>−

3</sup>.

9. The semiconductor diode as claimed in any of the preceding claims wherein the doping concentration in the active layer is less than 5×

10¹⁶ cm<sup>−

3</sup>.

10. A semiconductor diode as claimed in claim 1 wherein the additional layer produces a bump in the conduction band the energy of which is less than the energy of the second contact zone conduction band.

11. A semiconductor diode as claimed in claim 1 wherein the band gap and layer thickness of the additional layer produces a bump in the conduction band which has no substantial effect on the quantum efficiency of the detector and provides a significant reduction in the dark leakage current at a predetermined temperature.

12. A semiconductor diode as claimed in claim 11 wherein the predetermined temperature is within the range of 220K to 300K.

13. A semiconductor diode as claimed in claim 1 wherein the first contact zone comprises n-type material, the active layer is a p-type material, the additional layer is a p-type material and the second contact zone comprises p-type material.

14. A semiconductor diode as claimed in any of claim 1 wherein the first contact zone comprises p-type material, the additional layer is an n-type material, the active layer is an n-type material and the second contact zone comprises n-type material.

15. A device for detecting infrared radiation comprising a semiconductor diode as claimed in claim 1.

16. A device as claimed in claim 15 for operation in the wavelength range of 3-5 μ

m.

17. A device as claimed in claim 15 for operation in the wavelength range of 8-12 μ

m.

18. A negative luminescent device comprising a semiconductor diode as claimed in of claim 1.

5. A semiconductor diode comprising;

a first contact zone;

an active layer;

a second contact zone;

the first contact zone being doped with the opposite dopant type than that of the active layer;

the second contact zone being doped with the same dopant type as the active layer;

the first contact zone, the active layer and the second contact zone being arranged in a stack such that the active layer is located between the first contact zone and the second contact zone;

wherein the semiconductor diode structure further comprises an additional layer which is doped with the same dopant type as the active layer and which has a wider bandgap than the active layer, wherein the additional layer is located between the active layer and the first contact zone, wherein the second contact zone consists of;

a heavily doped layer and a buffer layer of lightly doped material;

the heavily doped layer and buffer layer being doped with the same dopant type, the heavily doped layer being located furthest from the active layer, and the arrangement being such that two excluding interfaces are formed between the active layer and the buffer layer of lightly doped material and between the buffer layer of lightly doped material and the heavily doped layer wherein the doping concentration of the buffer layer of lightly doped material of the second contact zone is substantially similar to the doping concentration of the additional layer.