Method for manufacturing gallium nitride compound semiconductor and light emitting element

  • US 6,861,270 B2
  • Filed: 03/06/2002
  • Issued: 03/01/2005
  • Est. Priority Date: 06/01/2000
  • Status: Active Grant
First Claim
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1. A method for manufacturing a gallium nitride based semiconductor, comprising the steps of:

  • (a) forming a first gallium nitride based semiconductor on a substrate, the first gallium nitride based semiconductor having a first surface;

    (b) forming on less than a total area of the first surface a composition material of the first gallium nitride based semiconductor; and

    (c) forming a second gallium nitride based semiconductor on the first gallium nitride based semiconductor on which the composition material is formed;

    wherein a spatial fluctuation is created in the band gap by variation in the compositional ratio in the second gallium nitride based semiconductor created by the composition material, and the second gallium nitride based semiconductor is a light emitting layer.

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