Method for manufacturing a semiconductor device

• US 6,864,183 B2
• Filed: 10/18/2002
• Issued: 03/08/2005
• Est. Priority Date: 04/26/2002
• Status: Expired due to Term

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Maekawa, Kazuyoshi
• Primary Examiner(s): NGUYEN, HA T
• Application Number:
  US10/273,151
• Publication Number:
  US 20030203606A1
• Time in Patent Office: 872 Days
• Field of Search: 438/706, 438/710, 438/723, 438/581, 438/630, 438/649, 438/651, 438/685, 438/664, 438/682, 438/592, 438768-770
• US Class Current: 438/710
• CPC Class Codes: H01L 21/28518 the conductive layers comprising silicides H01L21/28537 takes precedence
• CPC Class Codes: H01L 21/76802 by forming openings in dielectrics
• CPC Class Codes: H01L 29/665 using self aligned silicidation, i.e. salicide formation of conductive layers comprising silicides H01L21/28518

Abstract

Plasma etching is performed using a mixed gas of at least one or more fluorine-containing gases selected from the group consisting of a nitrogen trifluoride gas, a hydrogen fluoride gas, a dicarbon hexafluoride gas, a carbon tetrafluoride gas and a sulfur hexafluoride gas, and an argon gas to remove a native oxide film 5 being on a silicon substrate 1 and a gate electrode 3, followed by forming a metal silicide film on the silicon substrate 1 and the gate electrode 3.

Claims

1. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode, made of polysilicon, on a silicon substrate through a gate insulating film;

forming a sidewall, comprising a combination of a silicon oxide film, and a silicon nitride film on a side of said gate electrode;

removing a native oxide film on the surfaces of said silicon substrate and said gate electrode in a reduced pressure vapor phase system by plasma etching with a mixed gas of a) at least one fluorine containing gas selected from the group consisting of a hydrogen fluoride gas, and a dicarbon hexafluoride gas, and b) an argon gas, wherein said at least one fluorine containing gas is at a concentration of not less than 0.5 vol.% relative to said argon gas; and

forming a metal silicide film on said silicon substrate and said gate electrode after removing said native oxide film while maintaining said system in vacuum.

2. A method for manufacturing a semiconductor device according to claim 1 wherein said metal suicide consists of a silicide of at least one metal selected from the group consisting of cobalt, titanium, nickel, tungsten, molybdenum, chromium and platinum.

3. A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode, made of polysilicon, on a silicon substrate through a gate insulating film;

forming a sidewall, made of a combination of a silicon oxide film and a silicon nitride film on a side of said gate electrode;

removing native oxide films formed on the surfaces of said silicon substrate and said gate electrode by plasma etching with use of an argon gas,

etching said sidewall with an aqueous buffered hydrofluoric acid solution for lift-off to remove a residue of the plasma etching deposited on said sidewall; and

forming a metal suicide film on said silicon substrate and said gate electrode.

4. A method for manufacturing a semiconductor device, consisting essentially of the steps of:

forming an insulating film on a silicon substrate;

forming, in said insulating film, contact holes for exposing said silicon substrate therethrough;

removing a native oxide film formed on a silicon substrate surface exposed from said contact holes in a reduced pressure vapor phase system by one-step plasma etching using a mixed gas of a) a hydrogen fluoride gas or a dicarbon hexafluoride gas, and b) an argon gas; and

forming a metal silicide film on said silicon substrate, from which said native oxide film has been removed, while maintaining said system in vacuum.

5. The method according to claim 4, wherein said mixed gas comprises argon and a dicarbon hexafluoride gas.

6. The method according to claim 4, wherein the metal silicide is selected from the group consisting of a cobalt silicide, a nickel silicide, a titanium silicide, a molybdenum silicide, a chromium silicide and a platinum silicide.