Fabrication of a bipolar transistor using a sacrificial emitter

  • US 6,869,853 B1
  • Filed: 12/18/2002
  • Issued: 03/22/2005
  • Est. Priority Date: 12/18/2002
  • Status: Active Grant
First Claim
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1. A method of fabricating a bipolar transistor, the method comprising:

  • forming a sacrificial emitter over a base;

    forming a first oxide layer over the sacrificial emitter;

    forming a masking material over the first oxide layer;

    planarizing the masking material to expose the first oxide layer;

    etching a portion of the first oxide layer over the sacrificial emitter; and

    removing the sacrificial emitter.

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