Semiconductor light emitting device

  • US 6,870,191 B2
  • Filed: 07/24/2002
  • Issued: 03/22/2005
  • Est. Priority Date: 07/24/2001
  • Status: Active Grant
First Claim
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1. A semiconductor light emitting device comprising a substrate, a plurality of semiconductor layers formed on said substrate and made of different materials from that of said substrate and an ohmic electrode formed on the surface of the top layer of said semiconductor layers so that light generated in said semiconductor layers is emitted from said ohmic electrode or from said substrate,wherein at least one recess and/or protruding portion for scattering or diffracting light generated in said semiconductor layers is created in the surface of said substrate and the cross section of said recess is in a form of a reversed trapezoid and the cross section of said protruding portion is in a form of a trapezoid.

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