High voltage resistant edge structure for semiconductor components

  • US 6,870,201 B1
  • Filed: 11/02/1998
  • Issued: 03/22/2005
  • Est. Priority Date: 11/03/1997
  • Status: Expired due to Term
First Claim
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1. A high voltage semiconductor component, comprising:

  • a semiconductor body having a high voltage region and having an edge region of said high voltage region, a high voltage resistant structure at said edge region having at least one inner zone of a first conductivity type adjacent to a first surface of said semiconductor body;

    a cell field including a plurality of individual high voltage components in said high voltage region, said high voltage individual components being connected in parallel and arranged in individual cells;

    at least one floating guard ring of a second conductivity type arranged in said inner zone, said at least one floating guard ring surrounding said cell field, said at least one floating guard rind extending deep into said inner zone, said at least one floating guard ring extending into said inner zone to a depth greater than said high voltage individual components; and

    at least one inter-ring zone of said first conductivity type respectively arranged in said inner zone, said at least one inter-ring zone being arranged adjacent said at least one floating guard ring, said at least one floating guard ring and said at least one inter-ring zone having respective doping levels such that a net doping level over a whole surface area of said edge region is approximately equal to zero, said at least one floating guard ring and said at least one inter-ring zone have conductivities and geometries set such that their free charge carriers are totally depleted when a blocking voltage is applied.

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