High voltage resistant edge structure for semiconductor components

• US 6,870,201 B1
• Filed: 11/02/1998
• Issued: 03/22/2005
• Est. Priority Date: 11/03/1997
• Status: Expired due to Term

• Current Assignee: Infineon Technologies AG
• Original Assignee: Infineon Technologies AG
• Inventors: Weber, Hans, Gassel, Helmut, Strack, Helmut, Deboy, Gerald, Stengl, Jens-Peer, Tihanyi, Jenoe
• Primary Examiner(s): Brock, II, Paul E.
• Application Number:
  US09/530,553
• Time in Patent Office: 2,332 Days
• Field of Search: 257487-496, 257/170
• US Class Current: 257/170
• CPC Class Codes: H01L 29/0634 Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
• CPC Class Codes: H01L 29/41766 with at least part of the source or drain electrode having contact below the semiconductor surface, e.g. the source or drain electrode formed at least partially in a groove or with inclusions of conductor inside the semiconductor H01L29/41733 - H01L29/41758 take precedence
• CPC Class Codes: H01L 29/7395 Vertical transistors, e.g. vertical IGBT
• CPC Class Codes: H01L 29/7396 with a non planar surface, e.g. with a non planar gate or with a trench or recess or pillar in the surface of the emitter, base or collector region for improving current density or short circuiting the emitter and base regions H01L29/7398 takes precedence
• CPC Class Codes: H01L 29/7802 Vertical DMOS transistors, i.e. VDMOS transistors
• CPC Class Codes: H01L 29/7811 with an edge termination structure guard regions per se H01L29/0619; field plates per se H01L29/402

Abstract

The invention relates to a high voltage resistant edge structure in the edge region of a semiconductor component which has floating guard rings of the first conductivity type and inter-ring zones of the second conductivity type which are arranged between the floating guard rings, wherein the conductivities and/or the inter-ring zones are set such that their charge carriers are totally depleted when blocking voltage is applied. The inventive edge structure achieves a modulation of the electrical field both at the surface and in the volume of the semiconductor body. If the inventive edge structure is suitably dimensioned, the field intensity maximum can easily be situated in the depth; that is, in the region of the vertical p-n junction. Thus, a suitable edge construction which permits a “soft” leakage of the electrical field in the volume can always be provided over a wide range of concentrations of p and n doping.

Claims

1. A high voltage semiconductor component, comprising:

a semiconductor body having a high voltage region and having an edge region of said high voltage region, a high voltage resistant structure at said edge region having at least one inner zone of a first conductivity type adjacent to a first surface of said semiconductor body;

a cell field including a plurality of individual high voltage components in said high voltage region, said high voltage individual components being connected in parallel and arranged in individual cells;

at least one floating guard ring of a second conductivity type arranged in said inner zone, said at least one floating guard ring surrounding said cell field, said at least one floating guard rind extending deep into said inner zone, said at least one floating guard ring extending into said inner zone to a depth greater than said high voltage individual components; and

at least one inter-ring zone of said first conductivity type respectively arranged in said inner zone, said at least one inter-ring zone being arranged adjacent said at least one floating guard ring,

said at least one floating guard ring and said at least one inter-ring zone having respective doping levels such that a net doping level over a whole surface area of said edge region is approximately equal to zero, said at least one floating guard ring and said at least one inter-ring zone have conductivities and geometries set such that their free charge carriers are totally depleted when a blocking voltage is applied.

2. The high voltage semiconductor component as claimed in claim 1, wherein said at least one floating guard ring has one of a U-shaped or V-shaped cross-section.

3. The high voltage semiconductor component as claimed in claim 1, further comprising:

at least one space charge zone stopper located at an outermost edge of said edge region of said semiconductor component.

4. The high voltage semiconductor component as claimed in claim 3, wherein said space charge zone stopper comprises a heavily doped region of said first conductivity type, said heavily doped region being arranged in said inner zone.

5. The high voltage semiconductor component as claimed in claim 3, wherein said space charge zone stopper comprises a damage implanted region being arranged in said inner zone.

6. The high voltage semiconductor component as claimed in claim 3, wherein said space charge zone stopper comprises an electrode connected to said inner zone, said electrode being one of metallic or containing polysilicon.

7. The high voltage semiconductor component as claimed in claim 1, further comprising:

at least one magnetoresistor located at an inner edge of said edge region of said semiconductor component.

8. The high voltage semiconductor component as claimed in claim 7, wherein at least one of said magnetoresistors is simultaneously a gate electrode of said semiconductor component.

9. The high voltage semiconductor component as claimed in claim 7, wherein at least an outermost of said magnetoresistors is nearly completely enclosed by a cathode metallization in a direction of said first surface of said semiconductor component.

10. The high voltage semiconductor component as claimed in claim 9, wherein said cathode metallization is a metallization of a source electrode of said semiconductor component.

11. The high voltage semiconductor component as claimed in claim 1, wherein said at least one inter-ring zone in said edge region has a cross-section tapered to said first surface.

12. The high voltage semiconductor component as claimed in claim 1, wherein said individual high voltage components are one of vertical power transistors and IGBTs.

15. A high voltage semiconductor component as claimed in claim 1, wherein said at least one floating guard ring is a plurality of floating guard rings;

said at least one inter-ring zone is a plurality of inter-ring zones disposed between respective ones of said plurality of floating guard rings;

said plurality of floating guard rings being lightly doped at said second conductivity type;

said plurality of inter-ring zones being lightly doped at said first conductivity type.

16. A high voltage semiconductor component as claimed in claim 1, wherein said at least one floating guard ring is a plurality of floating guard rings;

said at least one inter-ring zone is a plurality of inter-ring zones disposed between respective ones of said plurality of floating guard rings;

said plurality of floating guard rings being doped at said second conductivity type;

said plurality of inter-ring zones being heavily doped at said first conductivity type.

17. A high voltage semiconductor component as claimed in claim 1, further comprising:

a layer doped at said second conductivity type between respective ones of said floating guard rings and said inter-ring zones.

18. A high voltage semiconductor component as claimed in claim 1, further comprising:

first and second layers between respective ones of said floating guard rings and said inter-ring zones, said first layer being doped at said first conductivity type and said second layer being doped at said second conductivity type.

19. A high voltage semiconductor component as claimed in claim 1, wherein said at least one floating guard ring is a plurality of floating guard rings;

said at least one inter-ring zone is a plurality of inter-ring zones disposed between respective ones of said plurality of floating guard rings;

said plurality of floating guard rings extending into said inner zone of said semiconductor body in substantially parallel columnar cross sections disposed at a regular spacing from one another.

20. A high voltage semiconductor component as claimed in claim 19, wherein each of said plurality of floating guard rings extend to a same depth into said semiconductor body.

25. A high voltage semiconductor component as claimed in claim 1, wherein said at least one floating guard ring extends entirely through said at least one inner zone.

26. A high voltage semiconductor component as claimed in claim 1, wherein said at least one floating guard ring extends entirely through said semiconductor body.

13. A semiconductor chip, comprising:

a substrate having a major surface;

a field of high voltage semiconductor components defining a high voltage portion in said substrate;

an edge structure at an edge of said high voltage portion, said edge structure separating said high voltage portion of said substrate from an edge of said major surface of said substrate, said edge structure including;

at least one inner zone of a first conductivity type defining a ring structure around said field of high voltage semiconductor components at said major surface;

at least one floating guard ring of a second conductivity type arranged in said at least one inner zone, said at least one floating guard ring extending into said substrate to a depth greater than said high voltage semiconductor components; and

at least one inter-ring zone of said first conductivity type arranged in said at least one inner zone, said at least one inter-ring zone being adjacent to said at least one floating guard ring, at least one of said at least one inter-ring zone and said at least one floating guard ring being of a conductivity and a geometry such that their free charge carriers are totally depleted when a blocking voltage is applied, said at least one inter-ring zone and said at least one floating guard ring having a net doping level over a whole surface area of said major surface of said at least one inner zone.

21. A semiconductor chip as claimed in claim 13, wherein said at least one floating guard ring is a plurality of floating guard rings;

said at least one inter-ring zone is a plurality of inter-ring zones disposed between respective ones of said plurality of floating guard rings;

said plurality of floating guard rings being lightly doped at said second conductivity type;

said plurality of inter-ring zones being lightly doped at said first conductivity type.

22. A semiconductor chip as claimed in claim 13, wherein said at least one floating guard ring is a plurality of floating guard rings;

said at least one inter-ring zone is a plurality of inter-ring zones disposed between respective ones of said plurality of floating guard rings;

said plurality of floating guard rings being doped at said second conductivity type;

said plurality of inter-ring zones being heavily doped at said first conductivity type.

23. A semiconductor chip as claimed in claim 13, further comprising:

a layer doped at said second conductivity type between respective ones of said floating guard rings and said inter-ring zones.

24. A semiconductor chip as claimed in claim 13, further comprising:

first and second layers between respective ones of said floating guard rings and said inter-ring zones, said first layer being doped at said first conductivity type and said second layer being doped at said second conductivity type.

27. A semiconductor chip as claimed in claim 13, wherein said at least one floating guard ring extends entirely through said at least one inner zone.

28. A semiconductor chip as claimed in claim 13, wherein said at least one floating guard ring extends entirely through said substrate.

14. A semiconductor chip, comprising:

a substrate having a major surface;

a plurality of high voltage vertical MOSFET components in said substrate;

an edge structure at an edge of said plurality of high voltage vertical MOSFET components to separate said high voltage vertical MOSFET components from a remainder of said substrate, said edge structure including;

at least one inner zone of a first conductivity type defining a ring structure around said plurality of high voltage semiconductor components at said major surface;

at least one floating guard ring of a second conductivity type arranged in said at least one inner zone, said at least one floating guard ring extending deep into said at least one inner zone, said at least one floating guard ring extending deeper into said substrate than said high voltage vertical MOSFET components; and

an inter-ring zone of said first conductivity type arranged in said at least one inner zone, said inter-ring zone being adjacent to said at least one floating guard ring,

at least one of said inter-ring zone and said at least one floating guard ring being of a conductivity and a geometry such that their free charge carriers are totally depleted when a blocking voltage is applied, said at least one inter-ring zone and said at least one floating guard ring having respective doping levels such that a net doping level over said at least one inner zone is approximately equal to zero.

29. A semiconductor chip as claimed in claim 14, wherein said at least one floating guard ring extends entirely through said at least one inner zone.

30. A semiconductor chip as claimed in claim 14, wherein said at least one floating guard ring extends entirely through said substrate.