Semiconductor device having a thin-film circuit element provided above an integrated circuit

• US 6,870,256 B2
• Filed: 09/25/2002
• Issued: 03/22/2005
• Est. Priority Date: 02/15/1999
• Status: Expired due to Term

• Current Assignee: Casio Computer Company Limited
• Original Assignee: Casio Computer Company Limited
• Inventors: Mihara, Ichiro, Wakabayashi, Takeshi, Watanabe, Katsumi, Aoki, Yutaka
• Primary Examiner(s): Pham, Long
• Assistant Examiner(s): PIZARRO CRESPO, MARCOS D
• Application Number:
  US10/254,222
• Publication Number:
  US 20030038331A1
• Time in Patent Office: 909 Days
• Field of Search: 257528-543, 257678-796, 438/238, 438381-399
• US Class Current: 257/700
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 23/5225 Shielding layers formed together with wiring layers
• CPC Class Codes: H01L 23/5227 Inductive arrangements or effects of, or between, wiring layers other inductive arrangements H01L23/645
• CPC Class Codes: H01L 23/5228 Resistive arrangements or effects of, or between, wiring layers other resistive arrangements H01L23/647
• CPC Class Codes: H01L 23/525 with adaptable interconnections
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/1423 Monolithic Microwave Integrated Circuit [MMIC]
• CPC Class Codes: H01L 2924/19041 being a capacitor

Abstract

In a semiconductor device, re-wiring is provided on a circuit element formation region of a semiconductor substrate. A columnar electrode for connection with a circuit board is provided on the rewiring. A first insulating film is provided over the semiconductor substrate excluding a connection pad, and a ground potential layer connected to a ground potential is provided on an upper surface of the first insulating film. A re-wiring is provided over the ground potential layer with a second insulating film interposed. The ground potential layer serves as a barrier layer for preventing crosstalk between the re-wiring and circuit element formation region. A thin-film circuit element is provided on the second insulating film, and a second ground potential layer is provided as a second barrier layer over the thin-film circuit element with an insulating film interposed. Re-wiring is provided over the second ground potential layer.

Claims

1. A semiconductor device comprising:

a semiconductor substrate having a circuit element formation region, in which an integrated circuit is formed, and a plurality of connection pads;

a thin-film circuit element comprising a passive element over the circuit element formation region through an insulating film and a plurality of terminals connected to the passive element, the plurality of terminals being connected to the integrated circuit through at least one of the plurality of connection pads, the thin-film circuit element having one surface facing the integrated circuit and the other surface opposing the one surface, and the plurality of terminals being provided on the one and the other surfaces;

at least one straight-shaped columnar electrode provided on at least one of the plurality of terminals on the other surface of the thin-film circuit element, and having an exposed top end face for coupling to an outer circuit; and

a sealing film which covers the thin-film circuit element and the semiconductor substrate except for the top end face of the straight-shaped columnar electrode.

2. A semiconductor device according to claim 1, wherein:

at least one of the plurality of terminals is connected to at least one of the plurality of connection pads, and

at least one of the plurality of terminals which is not connected to one of the plurality of connection pads, is provided with the at least one straight-shaped columnar electrode thereon.

3. A semiconductor device according to claim 1, wherein:

at least one of the plurality of terminals is connected to at least one of the plurality of connection pads, and

each of the terminals is provided with a straight-shaped columnar electrode thereon.

4. A semiconductor device according to claim 1, wherein:

the thin-film circuit element comprises at least one insulating film, and at least two conductor layers provided through the at least one insulating film,

the plurality of terminals are formed by the conductor layers,

at least one of the plurality of terminals of one of the at least two conductor layers is connected to at least one of the plurality of connection pads, and

at least one of the plurality of terminals of another of the at least two conductor layers is provided with the at least one straight-shaped columnar electrode thereon.

5. A semiconductor device according to claim 1, wherein:

the thin-film circuit element comprises at least one insulating film, and at least two conductor layers provided through the at least one insulating film,

at least one of the plurality of terminals formed of each conductor layer is connected to at least one of the plurality of connection pads, and

each conductor layer is provided with a straight-shaped columnar electrode thereon.