Porous, film, wiring structure, and method of forming the same

  • US 6,873,052 B2
  • Filed: 06/30/2003
  • Issued: 03/29/2005
  • Est. Priority Date: 01/27/1999
  • Status: Expired due to Term
First Claim
Patent Images

1. A wiring structure comprising:

  • a first inter-layer dielectric formed on a substrate and having a contact hole, said first inter-layer dielectric being composed of a porous film having a relatively low porosity;

    a second inter-layer dielectric formed on said first inter-layer dielectric and having a wire groove, said second inter-layer dielectric being composed of a porous film having a relatively high porosity;

    a contact composed of a metal film filled in said contact hole; and

    a metal wire composed of a metal film filled in said wire groove.

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