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Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier

  • US 6,876,021 B2
  • Filed: 11/25/2002
  • Issued: 04/05/2005
  • Est. Priority Date: 11/25/2002
  • Status: Active Grant
First Claim
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1. A ferroelectric device comprising:

  • a ferroelectric capacitor comprising;

    a bottom electrode;

    a ferroelectric layer formed on the bottom electrode;

    a top electrode formed on the ferroelectric layer; and

    a sidewall diffusion barrier layer formed at least on sidewalls of the ferroelectric capacitor, the sidewall diffusion barrier layer being comprised of amorphous aluminum oxide formed via a physical vapor deposition process.

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