Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier
First Claim
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1. A ferroelectric device comprising:
- a ferroelectric capacitor comprising;
a bottom electrode;
a ferroelectric layer formed on the bottom electrode;
a top electrode formed on the ferroelectric layer; and
a sidewall diffusion barrier layer formed at least on sidewalls of the ferroelectric capacitor, the sidewall diffusion barrier layer being comprised of amorphous aluminum oxide formed via a physical vapor deposition process.
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Abstract
The present invention forms sidewall diffusion barrier layer(s) that mitigate hydrogen contamination of ferroelectric capacitors. Sidewall diffusion barrier layer(s) of the present invention are formed via a physical vapor deposition process at a low temperature. By so doing, the sidewall diffusion barrier layer(s) are substantially amorphous and provide superior protection against hydrogen diffusion than conventional and/or crystalline sidewall diffusion barrier layers.
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17 Claims
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1. A ferroelectric device comprising:
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a ferroelectric capacitor comprising;
a bottom electrode;
a ferroelectric layer formed on the bottom electrode;
a top electrode formed on the ferroelectric layer; and
a sidewall diffusion barrier layer formed at least on sidewalls of the ferroelectric capacitor, the sidewall diffusion barrier layer being comprised of amorphous aluminum oxide formed via a physical vapor deposition process. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10)
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11. A ferroelectric device comprising:
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a ferroelectric capacitor comprising;
a bottom electrode;
a ferroelectric layer formed on the bottom electrode;
a top electrode formed on the ferroelectric layer; and
a sidewall diffusion barrier layer formed at least on sidewalls of the ferroelectric capacitor, the sidewall diffusion barrier layer being comprised of amorphous aluminum oxide. - View Dependent Claims (12, 13, 14, 15, 16, 17)
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