Active matrix substrate and manufacturing method therefor

  • US 6,891,196 B2
  • Filed: 07/11/2003
  • Issued: 05/10/2005
  • Est. Priority Date: 10/26/1999
  • Status: Expired due to Term
First Claim
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1. A lateral electrical field type active matrix substrate comprising:

  • (a) a gate electrode layer, a gate insulating layer and an amorphous silicon semiconductor layer deposited in a substantially stacked fashion on a transparent insulating substrate, viewed from a direction normal to said transparent insulating substrate, to form a layered structure, including a gate electrode, a gate wiring, a comb-shaped common electrode and a thin-film transistor area;

    (b) a drain wiring formed on a first passivation film disposed on said substrate so as to cover said layered structure; and

    (c) a second passivation film formed as a layer overlying said drain wiring and said first passivation film;

    (d) source/drain openings passing through said first passivation film and said second passivation film to reach said amorphous silicon semiconductor layer, and (e) an opening passing through said second passivation film to reach said drain wiring;

    wherein (f) a wiring layer extending through said drain opening to said drain wiring and a pixel electrode connected to said source opening are formed by a pixel electrode film disposed on said second passivation film.

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