Method for manufacturing liquid crystal panel, liquid crystal panel and manufacturing system of the same

• US 6,891,576 B2
• Filed: 03/10/2003
• Issued: 05/10/2005
• Est. Priority Date: 03/17/1999
• Status: Expired due to Term

• Current Assignee: Sharp Kabushiki Kaisha (Hon Hai Precision Industry Co., Ltd.)
• Original Assignee: Fujitsu Display Technologies Corporation (Fujitsu Limited)
• Inventors: Zhang, Hongyung
• Primary Examiner(s): Ton, Toan
• Assistant Examiner(s): DUONG, TAI V
• Application Number:
  US10/385,050
• Publication Number:
  US 20030231277A1
• Time in Patent Office: 792 Days
• Field of Search: 349/1, 349/42, 349/43, 349/73, 349/158, 349/187, 445/24, 445/25, 445/60, 445/65, 445/66, 438/30, 118/35, 118/40, 118/719, 414/935, 414/937, 414/939
• US Class Current: 349/1
• CPC Class Codes: G02F 1/133351 Manufacturing of individual cells out of a plurality of cells, e.g. by dicing
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence

Abstract

A substrate is plotted into a plurality of blocks, and each block is plotted into one or a plurality of device-forming regions. By using a first manufacturing line, a conductive film, an insulating film and a semiconductor film which constitute TFT are formed in the device-forming region. Then, primary cutting is performed to cut the substrate into the respective blocks and form a plurality of sub-TFT substrates. Then, by using a second manufacturing line, processing is performed for each sub-TFT substrate in accordance with specifications of a liquid crystal panel to be manufactured. Then, secondary cutting is performed to cut the sub-TFT substrate into respective device-forming regions.

Claims

1. A manufacturing system of a liquid crystal panel comprising:

a first manufacturing line including master plotting equipment for plotting a master glass substrate into a plurality of blocks, block plotting equipment for plotting each block into one or more device-forming regions, thin film transistor (TFT) equipment for forming a TFT in at least one of the device-forming regions, film-forming equipment for forming a semiconductor film serving as an active layer of the TFT, and cutting equipment for performing a primary cutting process in which the master glass substrate is cut in line with each of the blocks to be made into a sub-TFT substrate; and

a second manufacturing line including manufacturing equipment for executing processing of the sub-TFT substrate after the primary cutting process in accordance with a device to be manufactured, and pixel electrode film-forming equipment for forming a pixel electrode above the sub-TFT substrate.