Semiconductor device

  • US 6,900,463 B1
  • Filed: 09/08/1992
  • Issued: 05/31/2005
  • Est. Priority Date: 06/30/1980
  • Status: Active Grant
First Claim
Patent Images

1. A thin film transistor comprising:

  • a pair of source and drain regions;

    a channel region between said source and drain regions; and

    a gate electrode adjacent to said channel region with a gate insulating film interposed therebetween, said channel region comprising an amorphous silicon semiconductor material doped with a recombination center neutralizer selected from the group consisting of H, a halogen and a combination thereof;

    said pair of source and drain regions comprising a non-single crystal semiconductor material doped with a recombination center neutralizer selected from the group consisting of H, a halogen and a combination thereof, and having an impurity conductivity type to form junctions in contact with said channel region, wherein at least a portion of said gate insulating film which is in direct contact with said channel region comprises a nitride.

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