Method of making a semiconductor device having a low K dielectric

DC
  • US 6,903,004 B1
  • Filed: 12/16/2003
  • Issued: 06/07/2005
  • Est. Priority Date: 12/16/2003
  • Status: Active Grant
First Claim
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1. A method comprising:

  • forming a dielectric overlying a substrate of a wafer, wherein the forming the dielectric further comprises;

    forming a low K dielectric layer overlying the substrate by a chemical vapor deposition (CVD) process using a silicon precursor, wherein a dielectric constant of the low K dielectric layer is less than 3.0;

    forming a second dielectric layer overlying the low K dielectric layer by a CVD process using the silicon precursor;

    forming a void in the dielectric including in the low K dielectric layer and the second dielectric layer;

    depositing a material over the wafer including depositing the material in the void;

    removing portions of the material exterior to the void by polishing the wafer with a chemical mechanical polishing (CMP) process wherein the polishing removes at least some of the second dielectric layer.

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