Semiconductor device and method of fabricating the same

• US 6,906,429 B2
• Filed: 07/16/2003
• Issued: 06/14/2005
• Est. Priority Date: 07/17/2002
• Status: Expired due to Fees

• Current Assignee: Dai Nippon Printing Company Limited
• Original Assignee: Dai Nippon Printing Company Limited
• Inventors: Tsubosaki, Kunihiro
• Primary Examiner(s): CLARK, JASMINE JHIHAN B
• Application Number:
  US10/619,551
• Publication Number:
  US 20050073049A1
• Time in Patent Office: 699 Days
• Field of Search: 257/780, 257/781, 257/782, 257/738, 257/751
• US Class Current: 257/780
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05008 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body, e.g.
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05144 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05184 Tungsten [W] as principal constituent
• CPC Class Codes: H01L 2224/05568 the whole external layer protruding from the surface
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/13 of an individual bump connector
• CPC Class Codes: H01L 2224/13022 the bump connector being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/13023 the whole bump connector protruding from the surface
• CPC Class Codes: H01L 2224/13099 Material
• CPC Class Codes: H01L 23/3114 the device being a chip scale package, e.g. CSP
• CPC Class Codes: H01L 23/3192 : Multilayer coating
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/10 : Bump connectors bumps on insulating substrates, e.g. chip carriers, H01L23/49816; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01004 : Beryllium [Be]
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01009 : Fluorine [F]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/0103 : Zinc [Zn]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01047 : Silver [Ag]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/10253 : Silicon [Si]
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/1433 : Application-specific integrated circuit [ASIC]
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding
• CPC Class Codes: H01L 2924/351 : Thermal stress
• CPC Class Codes: H05K 1/0271 : Arrangements for reducing stress or warp in rigid printed circuit boards, e.g. caused by loads, vibrations or differences in thermal expansion
• CPC Class Codes: H05K 3/3436 : having an array of bottom contacts, e.g. pad grid array or ball grid array components

Abstract

A semiconductor device comprises a semiconductor IC chip provided with electrode pads, and an insulating layer formed on a surface of the semiconductor IC chip, on the side of the electrode pads. Connecting terminals on the outer surface of the insulating layer and the electrode pads are connected by conductive posts. The insulating layer is formed of an insulating elastic material, and the conductive posts are formed of a conductive elastic material.

Claims

1. A semiconductor device comprising:

a semiconductor IC chip comprising a plurality of electrode pads, said pads each having a side;

an insulating layer located on a surface of the semiconductor IC chip, on a surface of each of the electrode pads;

a connecting terminal on an outer surface of the insulating layer; and

a conductive post extending through the insulating layer and connecting the electrode pad of the semiconductor IC chip to the connecting terminal;

wherein the insulating layer comprises an insulating elastic material and the conductive post comprises a conductive elastic material.

2. The semiconductor device according to claim 1, wherein

the conductive post comprises a synthetic rubber and conductive particles dispersed in the synthetic rubber.

3. The semiconductor device according to claim 2, wherein

the conductive elastic material of the conductive post comprises a composite paste comprising an addition-polymerized silicone rubber, and at least 70% by weight Ag particles dispersed in the addition-polymerized silicone rubber, and

the composite paste when cured has a volume resistivity of not more than 5×

10<sup>−

3</sup> Ω

·

cm.

4. The semiconductor device according to claim 1, further comprising:

a wiring layer located between an electrode pad of the semiconductor IC chip and the conductive post.

5. The semiconductor device according to claim 1, further comprising:

a wiring part located between the connecting terminal and the conductive post.

6. The semiconductor device according to claim 1, wherein the connecting terminal is a solder ball.

7. The semiconductor device according to claim 6, further comprising:

a barrier metal layer located between the solder ball and the conductive post.

8. The semiconductor device according to claim 1, wherein

the insulating elastic material of the insulating layer is selected from the group consisting of silicone rubber, fluororubber, polyurethane rubber, polybutadiene rubber, acrylonitrile-butadiene copolymer and polyisoprene rubber, and has an elastic modulus of not more than 100 MPa.

9. The semiconductor device according to claim 1, further comprising:

a protective layer on the outer surface of the insulating elastic material of the insulating layer, and

the connecting terminal comprises a portion located at a position on the protective layer.

10. The semiconductor device according to claim 9, wherein

the protective layer comprises a material selected from the group consisting of a polyimide resin, a liquid crystalline polymer and an epoxy solder resist.

11. The semiconductor device according to claim 1, comprising:

a wafer-level chip-scale package produced by cutting a wafer into a plurality of semiconductor IC chips.