Method and apparatus for reducing kTC noise in an active pixel sensor (APS) device

• US 6,917,027 B2
• Filed: 04/04/2002
• Issued: 07/12/2005
• Est. Priority Date: 04/04/2001
• Status: Expired due to Term

• Current Assignee: Aptina Imaging Corporation (ON Semiconductor Corporation)
• Original Assignee: Micron Technology, Inc.
• Inventors: Krymski, Alexander I.
• Primary Examiner(s): Luu, Thanh X.
• Assistant Examiner(s): Sohn, Seung C.
• Application Number:
  US10/117,791
• Publication Number:
  US 20020175269A1
• Time in Patent Office: 1,195 Days
• Field of Search: 250/208.1, 250/214.1, 250/214.C, 348/308, 348/309, 348/302, 348/241, 348/294, 257/292, 257/291, 257/290, 257/288, 257/431, 257/443, 257/E27.133, 257/E27.132
• US Class Current: 250/208.1
• CPC Class Codes: H04N 25/65 applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS

Abstract

An image sensing device, such as a CMOS Active Pixel Sensor (APS) device, includes an array of pixels. Each pixel includes a reset transistor connected between a photodetector and a supply voltage. In a readout operation, a signal integrated onto the photodetector is sampled onto a holding capacitor. The photodetector is then reset in a reference reset operation during which the photodetector is clamped to the supply voltage. A reset signal is sampled from the pixel while the photodetector is clamped to the supply voltage. Reset, or kTC, noise in the reset signal may be filtered by a source-follower transistor in the pixel.

Claims

1. An apparatus comprising:

a sensor including a plurality of pixels arranged in an array, each pixel including;

a photodetector;

a node, adapted for providing a supply voltage;

a reset transistor connected between the photodetector and the supply voltage node;

a sampling branch operative to sample a reset signal from the pixel; and

a readout controller operative to perform a reference reset operation by asserting a reset signal on a gate of the reset transistor at a voltage greater than a reference voltage, wherein the reference voltage is a minimum voltage which causes the reset transistor to conduct and clamp the pixel to the supply voltage, and to control the sampling branch to sample the reset signal during the reference reset operation.

2. The apparatus of claim 1, further comprising a source-follower transistor in the pixel operative to filter high frequency kTC noise from the reset signal.

3. The apparatus of claim 1, wherein the sensor comprises an Active Pixel Sensor (APS) device.

4. The apparatus of claim 1, wherein the sensor comprises a rolling shutter sensor, and wherein the pixel is a three transistor (3T) pixel.

5. An apparatus comprising:

a rolling shutter sensor comprising a plurality of three transistor (3T) pixels arranged in an array, each pixel including;

a photodetector;

a node, adapted for providing a supply voltage;

a reset transistor connected between the photodetector and the supply voltage node;

a sampling branch operative to sample a reset signal from the pixel; and

a readout controller, wherein said readout controller is operative

to perform a reference reset operation by asserting a reset signal on a gate of the reset transistor at a voltage greater than a minimum voltage which causes the reset transistor to conduct and clamp the pixel to the supply voltage,

to control the sampling branch to sample the reset signal during the reference reset operation, and

to decrease the supply voltage by a threshold voltage of the reset transistor while the reset signal is being sampled.

6. An apparatus comprising:

a freeze-frame shutter sensor including a plurality of five transistor (5T) pixels arranged in an array, each pixel including;

a photodetector;

a node, adapted for providing a supply voltage;

a reset transistor connected between the photodetector and the supply voltage node;

a sampling branch operative to sample a reset signal from the pixel; and

a readout controller operative to perform a reference reset operation by asserting a reset signal on a gate of the reset transistor at a voltage greater than a minimum voltage which causes the reset transistor to conduct and clamp the pixel to the supply voltage, and to control the sampling branch to sample the reset signal during the reference reset operation.

7. A method comprising:

resetting a sensing node in a pixel by asserting a reset signal at a gate of a reset transistor at a level higher than a reference voltage, wherein the reference voltage is a minimum voltage which causes the reset transistor to conduct and clamp the sensing node to a supply voltage; and

sampling a reset value while the reset signal is asserted and the sensing node is clamped to the supply voltage.

8. The method of claim 7, wherein said resetting the sensing node comprises resetting a photodetector in a rolling shutter Active Pixel Sensor (APS) device.

9. The method of claim 7, wherein said sampling comprises sampling the reset value in a double-sampling readout operation.

10. A method of claim 7, wherein said sampling is response to a sample signal and said sample signal is asserted before said reset signal is unasserted.

11. A method of claim 10, wherein said sample signal is unasserted before said reset signal is unasserted.

12. A method comprising the steps of:

resetting a sensing node in a pixel by asserting a reset signal at a gate of a reset transistor at a level higher than a minimum voltage which causes the reset transistor to conduct and clamp the sensing node to a supply voltage; and

sampling a reset value while reducing the supply voltage when the reset signal is asserted and the sensing node is clamped to the supply voltage.

13. The method of claim 12, wherein said reducing the supply voltage comprises reducing the supply voltage by a threshold voltage of the reset transistor.

14. A method comprising:

resetting a sensing node in a pixel by asserting a reset signal at a gate of a reset transistor at a level higher than a minimum voltage which causes the reset transistor to conduct and clamp the sensing node to a supply voltage to reset a photodetector in a freeze-frame shutter Active Pixel Sensor (APS) device; and

sampling a reset value while the reset signal is asserted and the sensing node is clamped to the supply voltage.

15. The method of claim 14, wherein said Active Pixel Sensor (APS) device includes a memory capacitor.

16. A method for reducing kTC noise in a Complemenary Metal Oxide Semiconductor (CMOS) sensor device, the method comprising:

asserting a reset signal at a gate of a reset transistor at a voltage greater than a reference voltage, wherein the reference voltage is a minimum voltage which causes the reset transistor to conduct and clamp a pixel to a supply voltage; and

reading a reset value for said pixel in the sensor while a sensing node in the pixel is clamped to said supply voltage.

17. The method of claim 16, wherein said supply voltage comprises a constant voltage.

18. The method of claim 16, further comprising filtering high frequency kTC noise in the reset signal through a low bandwidth filter.

19. The method of claim 16, wherein said reducing noise comprises reducing kTC noise in an Active Pixel Sensor (APS) CMOS sensor device.

20. A method of claim 16, wherein said reading is response to a sample signal and said sample signal is asserted before said reset signal is unasserted.

21. A method of claim 20, wherein said sample signal is unasserted before said reset signal is unasserted.