Methods for making multiple seed layers for metallic interconnects

DC
  • US 6,924,226 B2
  • Filed: 12/23/2002
  • Issued: 08/02/2005
  • Est. Priority Date: 10/02/1999
  • Status: Expired due to Term
First Claim
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1. A method for making metallic interconnects, which method is utilized at a stage of processing a substrate having a patterned insulating layer which includes at least one opening and a field surrounding the at least one opening, the field and the at least one opening being ready for depositing of one or more seed layers, which method comprises steps of:

  • depositing a substantially conformal seed layer over the field and inside surfaces of the at least one opening;

    depositing a substantially non-conformal seed layer over the substantially conformal seed layer, said substantially non-conformal seed layer being thicker than said substantially conformal seed layer over the field, wherein the substantially conformal and the substantially non-conformal seed layers do not seal the at least one opening; and

    electroplating a metallic layer over the substantially non-conformal seed layer, wherein the electroplated metallic layer comprises a material selected from a group consisting of Cu, Ag, or alloys comprising one or more of these metals.

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