Semiconductor light-emitting device and process for producing the same

• US 6,924,500 B2
• Filed: 01/30/2002
• Issued: 08/02/2005
• Est. Priority Date: 07/18/2000
• Status: Expired due to Term

• Current Assignee: Sony Corporation (Sony Group Corp.)
• Original Assignee: Sony Corporation (Sony Group Corp.)
• Inventors: Doi, Masato, Oohata, Toyoharu, Okuyama, Hiroyuki, Biwa, Goshi, Kikutani, Tomoyuki
• Primary Examiner(s): Thompson, Craig A.
• Assistant Examiner(s): Dolan, Jennifer M.
• Application Number:
  US10/062,687
• Publication Number:
  US 20020117677A1
• Time in Patent Office: 1,280 Days
• Field of Search: 257/13, 257/14, 257/15, 257/22, 257/76, 257/79, 257/88, 257/94, 257/103, 372/5, 372/43, 372/45
• US Class Current: 257/13
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02395 Arsenides
• CPC Class Codes: H01L 21/02409 Selenides
• CPC Class Codes: H01L 21/02411 Tellurides
• CPC Class Codes: H01L 21/02521 Materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02543 Phosphides
• CPC Class Codes: H01L 21/02546 Arsenides
• CPC Class Codes: H01L 21/0256 Selenides
• CPC Class Codes: H01L 21/02562 Tellurides
• CPC Class Codes: H01L 21/02573 Conductivity type
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 21/02642 Mask materials other than SiO2 or SiN
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/48139 with an intermediate bond, e.g. continuous wire daisy chain
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: H01L 33/24 of the light emitting region, e.g. non-planar junction
• CPC Class Codes: H01L 33/32 containing nitrogen

Abstract

Semiconductor light-emitting devices are provided. The semiconductor light-emitting devices include a substrate and a crystal layer selectively grown thereon at least a portion of the crystal layer is oriented along a plane that slants to or diagonally intersect a principal plane of orientation associated with the substrate thereby for example, enhancing crystal properties, preventing threading dislocations, and facilitating device miniaturization and separation during manufacturing and use thereof.

Claims

1. A semiconductor light-emitting device comprising:

a substrate including a substrate surface positioned along a substrate surface plane;

a crystal layer comprising an approximately hexagonal prismoid, having a face oriented about an S-plane, and a top region oriented about a C-plane; and

a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along at least a portion of the approximately hexagonal prismoid.

2. A semiconductor light-emitting device comprising:

a substrate including a substrate surface positioned along a surface plane;

a crystal layer including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane; and

a first conductive layer, an active layer, and a second conductive layer each formed along at least a portion of the crystal surface, wherein the crystal surface plane comprises a plane having a plane orientation inclined at an angle ranging from about 5 to about 6 degrees with respect to at least one of a S-plane and a (11-22) plane.

3. A semiconductor light-emitting device comprising:

a substrate including a substrate surface positioned along a substrate surface plane;

a crystal layer comprising an approximately hexagonal pyramid, having a face oriented along an S-plane that diagonally intersects the substrate surface plane; and

a layer of a first conductivity type, an active layer, and a layer of a second conductivity type each formed along at least a portion of the approximately hexagonal pyramid, wherein a current is injected into the active layer such that a current density is lower near or at an apex of the approximately hexagonal pyramid than in the face of the approximately hexagonal pyramid.

4. A semiconductor light-emitting device comprising:

a substrate including a substrate surface positioned along a substrate surface plane;

a crystal grown layer formed by selective growth and including a crystal surface oriented along a crystal surface plane diagonally intersecting the substrate surface plane;

an active layer which is formed along at least a portion of the crystal grown layer that emits light upon injection of an amount of current;

and a reflecting region which is formed substantially parallel to the crystal surface plane and reflects at least a portion of the light emerging from the active layer, wherein the active layer is approximately parallel to a plane having a plane orientation inclined at an angle ranging from about 5 to about 6 degrees with respect to at least one of a S-plane and a (11-22) plane.