Semiconductor package

• US 6,924,557 B2
• Filed: 12/23/2002
• Issued: 08/02/2005
• Est. Priority Date: 01/09/2002
• Status: Active Grant

• Current Assignee: Advanced Semiconductor Engineering Inc (ASE Technology Holding Co., Ltd.)
• Original Assignee: Advanced Semiconductor Engineering Inc (ASE Technology Holding Co., Ltd.)
• Inventors: Fang, Jen-Kuang
• Primary Examiner(s): Nelms, David
• Assistant Examiner(s): Nguyen, Thinh T
• Application Number:
  US10/327,800
• Publication Number:
  US 20030127748A1
• Time in Patent Office: 953 Days
• Field of Search: 257/778, 257/668, 257/676, 257/779, 257/690, 257/735, 257/782, 257/787, 257/723, 257/724, 257/686, 257/685
• US Class Current: 257/778
• CPC Class Codes: H01L 2224/023 Redistribution layers [RDL] for bonding areas
• CPC Class Codes: H01L 2224/05001 Internal layers
• CPC Class Codes: H01L 2224/05022 the internal layer being at least partially embedded in the surface
• CPC Class Codes: H01L 2224/05024 the internal layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05572 the external layer extending out of an opening
• CPC Class Codes: H01L 2224/05599 Material
• CPC Class Codes: H01L 2224/06131 being uniform, i.e. having a uniform pitch across the array
• CPC Class Codes: H01L 2224/16 of an individual bump connector
• CPC Class Codes: H01L 2224/45015 being circular
• CPC Class Codes: H01L 2224/45099 Material
• CPC Class Codes: H01L 2224/451 with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48247 connecting the wire to a bond pad of the item
• CPC Class Codes: H01L 2224/4826 Connecting between the body and an opposite side of the item with respect to the body
• CPC Class Codes: H01L 2224/81801 Soldering or alloying
• CPC Class Codes: H01L 2224/85399 Material
• CPC Class Codes: H01L 23/3128 the substrate having spherical bumps for external connection
• CPC Class Codes: H01L 23/522 including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
• CPC Class Codes: H01L 24/05 of an individual bonding area
• CPC Class Codes: H01L 24/48 : of an individual wire connector
• CPC Class Codes: H01L 24/81 : using a bump connector
• CPC Class Codes: H01L 25/0655 : the devices being arranged next to each other
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/00015 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed as prior art
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01075 : Rhenium [Re]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/15311 : being a ball array, e.g. BGA
• CPC Class Codes: H01L 2924/207 : Diameter ranges
• CPC Class Codes: H01L 2924/30105 : Capacitance

Abstract

The present invention discloses a semiconductor package, wherein several chips can be packed thereinto. The present invention uses under bump metallurgies or bonding wires to connect the associated circuits of at least two chips in serial or in parallel. At least one slicing path is located between the at least two chips and a substrate is provided with an upper surface and a lower surface in which the upper surface is flip-chip bonded with the at least two chips.

Claims

1. A semiconductor package, comprising:

a chip assembly including;

at least two chips, each having an under bump metallurgy, wherein each under bump metallurgy has an extended portion that is electrically connected to the extended portion of the other under bump metallurgy; and

at least one slicing path located between said at least two chips; and

a substrate including an upper surface and a lower surface, wherein said upper surface is flip-chip bonded with said chip assembly.

2. The semiconductor package of claim 1, further comprising an encapsulate for covering said upper surface of said substrate and said chip assembly.

3. The semiconductor package of claim 1, further comprising a plurality of solder balls on said lower surface of said substrate.

4. The semiconductor package of claim 1, further comprising an underfill disposed in an interior space between said substrate and said at least two chips.

5. The semiconductor package of claim 1, further comprising metal bonding wires for electrically connecting the extended portions of under bump metallurgies of said at least two chips.

6. The semiconductor package of claim 1, wherein the extended portions of under bump metallurgies are connected to each other directly.