Apparatus and method for electrolytically depositing copper on a semiconductor workpiece
First Claim
1. A tool for electrochemically depositing copper into submicron miro-recesses on a workpiece having a nonuniform copper seed layer less than 500 Å
- thick, the apparatus comprising;
an automated robotic transfer mechanism;
a plurality of electrochemical processing stations arranged about the robot so that the robot can automatically transfer workpieces to/from the processing stations, the processing stations having baths containing a plating solution including copper and workpiece holders, and the processing stations being configured to operate in a seed layer enhancement mode in which additional copper is electrochemically deposited onto the workpiece to enhance the seed layer for filling the recesses and a bulk plating mode in which copper is electroplated onto the workpiece until the recesses are filled.
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Abstract
A process for applying a metallization interconnect as to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced sed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.
189 Citations
5 Claims
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1. A tool for electrochemically depositing copper into submicron miro-recesses on a workpiece having a nonuniform copper seed layer less than 500 Å
- thick, the apparatus comprising;
an automated robotic transfer mechanism;
a plurality of electrochemical processing stations arranged about the robot so that the robot can automatically transfer workpieces to/from the processing stations, the processing stations having baths containing a plating solution including copper and workpiece holders, and the processing stations being configured to operate in a seed layer enhancement mode in which additional copper is electrochemically deposited onto the workpiece to enhance the seed layer for filling the recesses and a bulk plating mode in which copper is electroplated onto the workpiece until the recesses are filled. - View Dependent Claims (2, 3, 4, 5)
- thick, the apparatus comprising;
Specification