Low voltage multi-junction vertical cavity surface emitting laser

  • US 6,936,486 B2
  • Filed: 11/19/2002
  • Issued: 08/30/2005
  • Est. Priority Date: 11/19/2002
  • Status: Expired due to Fees
First Claim
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1. A method of fabricating an optical device with a wavelength of operation, the method comprising the steps of:

  • providing a first substrate;

    epitaxially growing a light emitting region which emits light at the wavelength of operation, the light emitting region being positioned on the first substrate wherein the light emitting region includes an active region and a contact region of a first conductivity type and a second conductivity type such that the light emitting region is sandwiched between contact regions of opposite conductivity types;

    epitaxially growing a first stack of alternate layers of a first material with a first index of refraction and a second material with a second index of refraction positioned on the light emitting region wherein the first index of refraction is substantially different from the second index of refraction so that the first stack of alternate layers forms a first mirror;

    solder bonding a second substrate to the first stack of alternate layers;

    removing the first substrate to substantially expose the light emitting region; and

    epitaxially growing a second stack of alternate layers of a third material with a third index of refraction and a fourth material with a fourth index of refraction positioned on the light emitting region wherein the third index of refraction is substantially different from the fourth index of refraction so that the second stack of alternate layers forms a second mirror.

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