Semiconductor light-emitting device and method for manufacturing the same

  • US 6,936,851 B2
  • Filed: 03/21/2003
  • Issued: 08/30/2005
  • Est. Priority Date: 03/21/2003
  • Status: Expired due to Term
First Claim
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1. A semiconductor light-emitting device comprising:

  • a substrate;

    a textured district defined on the surface, of said substrate comprising a plurality of etched trenches having a sloped etching profile with a smooth rotation of micro-facets without a prescribed angle of inclination;

    a first layer disposed on said textured district;

    comprising a plurality of inclined lower portions so as to guide the extended lattice defects away from propagating into the active layer, said first layer and said substrate form a lattice-mismatched misfit system, said substrate is selected from the group comprising group III-V, group IV, group II-VI elements and alloys, ZnO, spinel and sapphire; and

    a light-emitting structure containing an active layer disposed on said first layer.

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