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Method for making a reflective liquid crystal display device

  • US 6,943,049 B2
  • Filed: 09/12/2001
  • Issued: 09/13/2005
  • Est. Priority Date: 09/14/2000
  • Status: Expired due to Fees
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First Claim
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1. A method of manufacturing an active matrix reflective liquid crystal display device comprising an interlayer insulating film formed on a silicon film in which sources and drains of TFTs are formed, and a reflecting electrode having an irregular surface and formed on the interlayer insulating film, the method comprising the step of forming and processing the interlayer insulating film comprising steps A to G:

  • step A of forming the interlayer insulating film on the silicon film in which the sources and drains of TFTs are formed;

    step B of forming a photoresist layer on the interlayer insulating film;

    step C of patterning the photoresist layer by photolithography uses, in which a mask having a pattern formed with a resolution limit or less corresponding to the reflecting electrode to be formed is used as a photoresist mask for the photoresist layer so that portions of the photoresist layer corresponding to contact holes to be formed in the interlayer insulating film above the sources or drains can be completely removed, and surface irregularity can be formed in a portion of the photoresist layer corresponding to the reflecting electrode to be formed; and

    step D of etching the interlayer insulating film by using the photoresist layer patterned in step C as an etching mask so that portions of the interlayer insulating film, which correspond to the contact holes to be formed, are completely opened, and surface irregularity is formed in a portion of the interlayer insulating film which corresponds to the reflecting electrode to be formed;

    step E of depositing a metal film for simultaneously forming source electrodes communicating with the sources through the contact holes, signal wiring, drain electrodes communicating with the drains through the contact holes, and the reflecting electrode;

    step F of depositing a protecting film and patterning the protecting film to open portions of the protecting film which correspond to contact holes to be formed above the drain electrodes; and

    step G of forming a transparent conductive film on the protecting film so that the transparent conductive film is connected to the reflecting electrode through the contact holes, wherein step F comprises forming the protecting film comprising photoresist and patterning the protecting film by using, as a photoresist mask for the protecting film, a mask having a pattern formed with a resolution limit or less corresponding to the reflecting electrode to be formed, so that the portions of the protecting film corresponding to the contact holes to be formed above the drains can be completely removed, and surface irregularity can be formed in the portion of the protecting film corresponding to the reflecting electrode to be formed.

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