Active pixel sensor pixel having a photodetector whose output is coupled to an output transistor gate

  • US 6,943,838 B2
  • Filed: 12/26/2000
  • Issued: 09/13/2005
  • Est. Priority Date: 01/28/1994
  • Status: Expired due to Term
First Claim
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1. An imaging device, comprising:

  • a monolithic semiconductor integrated circuit substrate;

    a focal plane array of pixel cells, each one of said pixel cells comprising;

    a photodetector having a photodetector portion formed in said substrate and a photodetector electrode overlying said photodetector portion, said photodetector operable to accumulate photo-generated charge in said photodetector portion in response to incident radiation, and a charge coupled device section formed on said substrate adjacent said photodetector and having an output transistor whose gate is connected to said photodetector electrode to form a floating gate and at least one charge coupled device stage, said charge coupled device section configured and operable to transfer charge through said charge coupled device stage from said photodetector portion of said substrate to a drain of said output transistor during a reset operation and to produce an electrical signal indicative of said photo-generated charge.

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