Semiconductor and device nanotechnology and methods for their manufacture

• US 6,946,197 B2
• Filed: 02/20/2004
• Issued: 09/20/2005
• Est. Priority Date: 11/06/1998
• Status: Expired due to Fees

• Current Assignee: PPG Industries Ohio Incorporated (Nouryon BV)
• Original Assignee: NanoProducts Corporation (Nouryon BV)
• Inventors: Yadav, Tapesh, Williams, Stephen S., Hooker, Stephanie, Govyadinov, Alex, Mardilovich, Peter, Routkevitch, Dmitri
• Primary Examiner(s): Pham, Long
• Application Number:
  US10/783,629
• Publication Number:
  US 20040161949A1
• Time in Patent Office: 578 Days
• Field of Search: 428/402, 757/65, 423/276, 423/351, 423/414, 423/579
• US Class Current: 428/402
• CPC Class Codes: A61L 27/06 Titanium or titanium alloys
• CPC Class Codes: B01J 23/002 Mixed oxides other than spinels, e.g. perovskite
• CPC Class Codes: B01J 23/08 of gallium, indium or thallium
• CPC Class Codes: B01J 23/14 of germanium, tin or lead
• CPC Class Codes: B01J 35/23 in a colloidal state
• CPC Class Codes: B01J 37/18 with gases containing free hydrogen
• CPC Class Codes: B82Y 25/00 Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
• CPC Class Codes: C01B 3/001 characterised by the uptaking medium; Treatment thereof
• CPC Class Codes: C04B 35/00 Shaped ceramic products characterised by their composition porous ceramic products C04B38/00; ceramic articles characterised by particular shape, see the relevant classes, e.g. linings for casting ladles, tundishes, cups or the like B22D41/02; ceramic substrates for microelectronic semi-conductors H01L23/15; Ceramics compositions containing free metal bonded to carbides, diamond, oxides, borides, nitrides, silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides or sulfides other than as macroscopic reinforcing agents C22C; shaping of ceramics B28B; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products chemical preparation of powders of inorganic compounds C01; infiltration of sintered ceramic preforms with molten metal C04B41/51
• CPC Class Codes: G01N 27/125 Composition of the body, e.g. the composition of its sensitive layer
• CPC Class Codes: G01N 27/127 comprising nanoparticles
• CPC Class Codes: G01N 33/0004 Gaseous mixtures, e.g. polluted air gaseous biological material G01N33/497; exhaust gas of internal combustion engines G01M15/102
• CPC Class Codes: G01N 33/004 for CO, CO2
• CPC Class Codes: G01N 33/0047 for organic compounds
• CPC Class Codes: G01N 33/005 for H2
• CPC Class Codes: H01F 1/0045 Zero dimensional, e.g. nanoparticles, soft nanoparticles for medical/biological use preparation of fullerenes in general C01B32/15
• CPC Class Codes: H01F 1/405 of IV type, e.g. Ge1-xMnx
• CPC Class Codes: H01M 4/02 Electrodes composed of, or comprising, active material
• CPC Class Codes: H01M 4/90 Selection of catalytic material
• CPC Class Codes: Y02E 60/32 Hydrogen storage
• CPC Class Codes: Y02E 60/50 : Fuel cells
• CPC Class Codes: Y10S 977/89 : Deposition of materials, e.g. coating, cvd, or ald
• CPC Class Codes: Y10T 29/49002 : Electrical device making
• CPC Class Codes: Y10T 428/2982 : Particulate matter [e.g., sphere, flake, etc.]

Abstract

Device nanotechnology based on silicon wafers and other substrates is described. Methods for preparing such devices are discussed. The teachings allow integration of current semiconductor device, sensor device and other device fabrication methods with nanotechnology. Integration of nanotubes and nanowires to wafers is discussed. Sensors, electronics, biomedical and other devices are presented.

Claims

1. A method for preparing a device comprising:

providing a substrate;

depositing a layer comprising metal on the substrate;

processing the deposited layer into a substance comprising substantially parallel nanoscale pores;

depositing a substance of first composition in the nanoscale pores; and

providing at least one additional layer of second composition substantially perpendicular to the substance deposited in the nanoscale pores.

2. The method of claim 1, wherein the substrate comprises silicon wafer.

3. The method of claim 1, wherein the substrate comprises glass.

4. The method of claim 1, wherein the substrate comprises polymer.

5. The method of claim 1, wherein the substrate comprises metal.

6. The method of claim 1, wherein the layer comprising metal comprises aluminum.

7. The method of claim 1, wherein the substance of first composition comprises nanotubes or nanowires.

8. The method of claim 1, wherein the act of depositing a substance of first composition is followed by dissolution of the substance comprising substantially parallel nanoscale pores.

9. The method of claim 1, wherein the device comprises copper.

10. The method of claim 1, wherein the act of depositing a substance of first composition comprises one or more actions selected from the group consisting of spin coating, dip coating, spray coating, solution impregnation, sputtering, reactive sputtering, physical vapor deposition, chemical vapor deposition, atomic layer deposition, ion beam, e-beam deposition, molecular beam epitaxy, laser deposition, plasma deposition, electrophoretic deposition, magnetophoretic deposition, thermophoretic deposition, stamping, centrifugal casting, gel casting, extrusion, electrochemical deposition, printing and painting.

11. The method of claim 1, wherein the substance of first composition comprises a substance selected from the group—

organic, inorganic, metal, alloy, ceramic, polymer, ion conducting, non-metallic, composite, metal salts, metal complexes, bio-organisms, biologically active materials, biologically derived materials and biocomposites.

12. The method of claim 1, wherein the substance of first composition comprises a substance selected from—

titanium oxide, barium titanate, strontium titanate, zinc oxide, indium oxide, zirconium oxide, tin oxide, antimony oxide, tungsten oxide, molybdenum oxide, tantalum oxide, cerium oxide, iron oxide, manganesa oxide, rare earth oxides, binary and ternary complex oxides, lithium chloride, magnesium chloride, silicon carbide, bismuth telluride, gallium nitride, silicon, germanium, titanium boride, iron bonds, zirconates, eluminates, tungatates, stannotes, zincates, carbides, borutes, hydrides, oxides, oxynitrides, oxycarbides, halides, silicates, phosphides, nitrides, chalcogenides, enzymes, nucleotides, antibodies, cells, and polymers.

13. The method of claim 1 further comprising patterning the layer comprising metal using a mask.

14. The method of claim 1 wherein the act of depositing or processing includes photolithography.

15. The method of claim 1 wherein the device comprises a sensing device.

16. The method of claim 1 wherein the device comprises an electromagnetic device.

17. The method of claim 1 wherein the device comprises an electronic device.

18. The method of claim 1 wherein the device comprises an interconnect.

19. A method for preparing a device comprising:

providing a wafer comprising silicon;

depositing a layer on the wafer;

processing the deposited layer Into a substance comprising substantially parallel nanoscale pores;

preparing nanotubes or nanowires in the nanoscale pores; and

providing at least one additional layer of second composition substantially perpendicular to the nanotubes.