High temperature coefficient MOS bias generation circuit
First Claim
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1. A high temperature coefficient circuit comprising:
- a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device, and wherein the output current of the high temperature coefficient circuit drives an inductive load.
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Abstract
A high temperature coefficient includes a temperature dependent bias generation circuit serially coupled with a variable resistance. The resistance of the variable resistance device increases with increasing temperature such that the output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device.
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Citations
19 Claims
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1. A high temperature coefficient circuit comprising:
a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device, and wherein the output current of the high temperature coefficient circuit drives an inductive load. - View Dependent Claims (2, 3, 4, 5)
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6. A high temperature coefficient circuit comprising:
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a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device, wherein the variable resistance device comprises a triode transistor, and wherein the output current of the high temperature coefficient circuit drives an inductive load. - View Dependent Claims (7, 8)
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9. The high temperature coefficient circuit comprising:
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a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device, wherein the temperature dependent bias generation circuit comprises a current mirror serially coupled to a first pair of parallel transistors, wherein gate electrodes of the first pair of parallel transistors are coupled together, and wherein a drain electrode of a first transistor of the first parallel pair of transistors an a first leg of the bias generation circuit is coupled to the gate of the first transistor; and
a temperature setting resistor serially coupled to a second transistor of the first parallel pair of transistors on a second leg of the bias generation circuit, the temperature setting resistor having a second resistance, wherein the output current of the high temperature coefficient circuit is inversely proportional to the second resistance of the temperature setting resistor.
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10. An RF communication system, comprising:
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a transmit node for transmitting an RF information signal, the transmit node comprising a high temperature coefficient circuit for biasing an amplifier, wherein the high temperature coefficient circuit comprises, a temperature dependent bias generation circuit serially coupled with a variable resistance device having a resistance that increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device; and
a receive node for receiving the transmitted RF information signal. - View Dependent Claims (11, 12, 13)
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14. A high temperature coefficient circuit comprising:
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a current mirror serially coupled to a first pair of parallel transistors;
a variable resistance device serially coupled with a first transistor of the first pair of parallel transistors, wherein resistance of the variable resistance device increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device, wherein gate electrodes of the first pair of parallel transistors are coupled together, and wherein a drain electrode of the first transistor of the first parallel pair of transistors is coupled to the gate of the first transistor; and
a temperature setting resistor serially coupled to a second transistor of the first parallel pair of transistors, the temperature setting resistor having a second resistance, wherein the output current of the high temperature coefficient circuit is inversely proportional to the second resistance of the temperature setting resistor. - View Dependent Claims (15, 16, 17)
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18. A high temperature coefficient circuit comprising:
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a current mirror serially coupled to a first pair of parallel transistors;
a variable resistance device serially coupled with a first transistor of the first pair of parallel transistors, wherein resistance of the variable resistance device increases with increasing temperature, wherein an output current of the high temperature coefficient circuit is proportional to the resistance of the variable resistance device, wherein the variable resistance device comprises a triode transistor, and wherein the output current of the high temperature coefficient circuit drives an inductive load. - View Dependent Claims (19)
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Specification