Low-temperature fabrication of thin-film energy-storage devices
First Claim
1. A method of fabricating a solid-state energy-storage device, comprising:
- providing a substrate;
depositing a first film layer on the substrate by a process that includes simultaneously;
(a) depositing a first material to a location on the substrate, and (b) supplying energized ions of a second material different than the first material directed towards the first material to supply energy thereto and assisting growth of crystalline structure of the film layer during the deposition of the first material on the substrate;
forming an electrolyte second layer on the first layer; and
forming a third layer on the second layer, wherein providing the substrate includes forming a first contact layer on the substrate that at least partially separates the first layer from the substrate.
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Accused Products
Abstract
A method and system for fabricating solid-state energy-storage devices including fabrication films for devices without an anneal step, especially a cathode anneal of thin-film batteries. A film of an energy-storage device is fabricated by depositing a first material layer to a location on a substrate. Energy is supplied directly to the material forming the film. The energy can be in the form of energized ions of a second material. Supplying energy directly to the material and/or the film being deposited assists the growth of the crystalline structure of film. For lithium-ion energy-storage devices, the first material is an intercalation material, which releasably stores lithium ions therein. Supercapacitors and energy-conversion devices are also fabricated according the methods.
208 Citations
107 Claims
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1. A method of fabricating a solid-state energy-storage device, comprising:
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providing a substrate;
depositing a first film layer on the substrate by a process that includes simultaneously;
(a) depositing a first material to a location on the substrate, and (b) supplying energized ions of a second material different than the first material directed towards the first material to supply energy thereto and assisting growth of crystalline structure of the film layer during the deposition of the first material on the substrate;
forming an electrolyte second layer on the first layer; and
forming a third layer on the second layer, wherein providing the substrate includes forming a first contact layer on the substrate that at least partially separates the first layer from the substrate. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30)
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31. A method of fabricating a solid-state energy-storage device, comprising:
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providing a substrate;
depositing a first film layer on the substrate by a process that includes simultaneously;
(a) depositing a first material to a location on the substrate, and (b) supplying energized ions of a second material different than the first material directed towards the first material to supply energy thereto and assisting growth of crystalline structure of the film layer during the deposition of the first material on the substrate;
forming an electrolyte second layer on the first layer; and
forming a third layer on the second layer, wherein depositing the first layer includes depositing an intercalation material in the first layer to have a crystal orientation essentially perpendicular to a boundary between the first layer and the second layer, wherein depositing the intercalation first layer includes growing crystallite size of at least about 100 Angstroms. - View Dependent Claims (32, 33, 34, 35, 36, 37, 38, 39, 40, 41, 42, 43, 44, 45, 46, 47, 48, 49, 50, 51, 52, 53, 54, 55, 56, 57)
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58. A method of fabricating a solid-state energy-storage device, comprising:
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providing a substrate;
forming a seed film on the substrate;
forming a first film on the seed film by;
(a) depositing a first material to a location on the seed film, and (b) supplying a second material different than the first material adjacent the location to control growth of a crystalline structure of the first material at the location;
forming an electrolyte second film on the first film; and
forming a third film on the electrolyte second film. - View Dependent Claims (59, 60, 61, 62, 63, 64, 65, 66, 67, 68, 69, 70, 71, 72, 73)
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74. A method of fabricating a solid-state energy-storage device, comprising:
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providing a substrate;
depositing a first layer on the substrate by;
(a) depositing a first material to a location on the substrate, and (b) supplying energized particles of a second material different than the first material to the substrate adjacent the location to control growth of a crystalline structure of the first material at the location;
forming an electrolyte second layer on the first layer;
forming a third layer on the electrolyte second layer, and after performing the above steps, cryogenically annealing the energy-storage device. - View Dependent Claims (75, 76, 77, 78, 79, 80)
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81. A method of fabricating a solid-state energy-storage device, comprising:
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providing a substrate;
depositing a first film layer on the substrate by a process that includes simultaneously;
(a) depositing a first material to a location on the substrate, and (b) supplying energized ions of a second material different than the first material directed towards the first material to supply energy thereto and assisting growth of crystalline structure of the film layer during the deposition of the first material on the substrate;
forming an electrolyte second layer on the first layer; and
forming a third layer on the second layer,wherein the substrate has a thermal degradation temperature of less than 700 degrees;
wherein the first layer is a first film, wherein the first material is a first electrode material deposited using a deposition source;
wherein the supplying of the energized second material includes supplying particles energized above about 5 eV from a second source such that the particles provide energy to the first electrode material to deposit the first electrode material into a highly ordered crystal film;
wherein the electrolyte second layer is an electrolyte second film formed so as to be in contact with the first film;
wherein the third layer is a film that includes a second electrode material that includes an intercalation material; and
wherein the substrate is not subjected to a high temperature anneal. - View Dependent Claims (82, 83, 84, 85, 86, 87, 88, 89)
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90. A method of fabricating a solid-state energy-storage device, comprising:
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providing a substrate;
forming a seed film on the substrate;
depositing a first film layer on the seed film by a process that includes simultaneously;
(a) depositing a first material to a location on the substrate, and (b) supplying energized ions of a second material different than the first material directed towards the first material to supply energy thereto and assisting growth of crystalline structure of the film layer during the deposition of the first material on the substrate;
forming an electrolyte second layer on the first layer; and
forming a third layer on the second layer, wherein providing the substrate includes providing a substrate having a first contact layer on the substrate.
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91. An apparatus comprising:
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means for providing a substrate;
means for forming a first seed film on the substrate;
means for forming a first film on the seed film by;
(a) depositing a first material to a location on the first seed film, and (b) supplying a second material different than the first material adjacent the location to control growth of a crystalline structure of the first material at the location;
means for forming an electrolyte second film on the first film; and
means for forming a third film on the electrolyte second film. - View Dependent Claims (92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107)
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Specification