Semiconductor device including metal insulator semiconductor field effect transistor

• US 6,967,379 B2
• Filed: 09/10/2003
• Issued: 11/22/2005
• Est. Priority Date: 11/06/2002
• Status: Expired due to Term

• Current Assignee: Kioxia Corporation
• Original Assignee: Kabushiki Kaisha Toshiba (Toshiba Corporation)
• Inventors: Matsuo, Kouji
• Primary Examiner(s): Wilson, Allan R.
• Application Number:
  US10/658,371
• Publication Number:
  US 20040084734A1
• Time in Patent Office: 804 Days
• Field of Search: 257/204, 257/338, 257/369, 257/407
• US Class Current: 257/369
• CPC Class Codes: H01L 21/28097 the final conductor layer next to the insulator being a metallic silicide
• CPC Class Codes: H01L 21/823814 with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures
• CPC Class Codes: H01L 21/823842 gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
• CPC Class Codes: H01L 21/823864 with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
• CPC Class Codes: H01L 29/66545 using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate

Abstract

A semiconductor device comprises a semiconductor substrate, an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, a first gate electrode film provided on the gate insulating film of the N-channel MISFET and composed of a first metal silicide, a second gate electrode film provided on the gate insulating film of the P-channel MISFET and composed of a second metal silicide made of a second metal material different from a first metal material composing the first metal silicide, and a work function of the first gate electrode film being lower than that of the second gate electrode film.

Claims

1. A semiconductor device comprising:

a semiconductor substrate;

an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film;

a first gate electrode film provided on the gate insulating film of the N-channel MISFET, the first gate electrode film being comprised of a first metal silicide composed of a first metal material;

a second gate electrode film provided on the gate insulating film of the P-channel MISFET, the second gate electrode film being comprised of a second metal silicide and a third metal silicide, the second metal silicide being comprised of a second metal material different from the first metal material, the third metal silicide including the first metal material and having a lower silicon content than the first metal silicide; and

the first gate electrode film having a work function being lower than that of the second gate electrode film.

2. The semiconductor device according to claim 1, wherein the second gate electrode film further includes the first metal material which is not silicified.

3. The semiconductor device according to claim 1, wherein one material selected from the first metal material and the third metal silicide is presented in a form of a particle.

4. The semiconductor device according to claim 1, wherein the gate insulating film is comprised of a hafnium oxide film.

5. The semiconductor device according to claim 1, wherein the first metal material is comprised of one material selected from tungsten, molybdenum, titanium, zirconium, hafnium, tantalum and niobium.

6. The semiconductor device according to claim 1, wherein the second metal material is comprised of one material selected from platinum, palladium and rhodium.

7. The semiconductor device according to claim 1, wherein a number of silicon atoms per unit volume is 2.5 times more than a number of metal atoms per unit volume in a composition ratio between silicon and metal composing the first metal silicide.

8. A semiconductor device comprising:

a semiconductor substrate;

an N-channel MISFET and a P-channel MISFET provided on the semiconductor substrate, each of the N- and P-channel MISFETs being isolated by an isolation region and having a gate insulating film, elevated source/drain regions composed of a semiconductor film being provided on extension regions of the N-channel MISFET and the P-channel MISFET;

a first gate electrode film provided on the gate insulating film of the N-channel MISFET, the first gate electrode film being comprised of a first metal silicide composed of a first metal material;

a second gate electrode film provided on the gate insulating film of the P-channel MISFET, the second gate electrode film being comprised of a second metal silicide and a third metal silicide, the second metal silicide being comprised of a second metal material different from the first metal material, the third metal silicide including the first metal material and having a lower silicon content than the first metal silicide; and

the first gate electrode film having a work function lower than that of the second gate electrode film.

9. The semiconductor device according to claim 8, wherein a metal silicide film is provided on each of the elevated source/drain regions.

10. The semiconductor device according to claim 8, wherein a metal silicide film is provided on each of the elevated source/drain regions and the first and second gate electrodes.

11. The semiconductor device according to claim 10, wherein the metal silicide film is made of a nickel silicide film.